SQ4961EY-T1_GE3

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The SQ4961EY-T1_GE3 is a Field Effect Transistor (FET) array manufactured by Intersil Corporation. This FET array is specifically designed to improve signal integrity, reduce power consumption, and provide superior on-chip switching performance. This particular part number is an ultra- low capacitance FET array, with a low noise source that is designed to provide excellent ESD protection and improved switching speed. It is available in a DIP-14 package and is suitable for a variety of applications.

As a FET array, the SQ 4961EY-T1-GE3 works by controllably manipulating the electric field around charge carriers that flow between its metal oxide semiconductor (MOS) source and drain. This is enabled by applying a voltage to its gate terminal. An electric field is created between the gate, source and drain, which allows the FET array to act as a switch that can be used to control and provide electrical signals, as well as to regulate the supply of power.

The SQ4961EY-T1-GE3 is designed for a variety of applications, such as auto and industrial control, power management, and power switching applications. In an automotive setting, the FET array can be used to control motor speeds and other vehicle systems. In industrial settings, the FET array can be used for switching supplies, controlling relays, and powering microcontrollers and other electronic components. In power management applications, the FET array can be used to enable and disable power to devices and to regulate the voltage supplied to devices.

The SQ 4961EY-T1-GE3 contains an N-channel FET as its main building block. The N-channel FET is a three-terminal device that is commonly used in digital logic circuits. It works by creating an electric field between the gate, source and drain terminals, allowing the FET to act as a switch. To switch between its two logic states (on and off), a small amount of current called the gate current is passed through the gate terminal to control the FET’s switch state.

The SQ4961EY-T1-GE3 uses advanced process technology to provide low on-state resistance and ensure low power consumption. The FET array is also designed with a low parasitic capacitance to provide improved signal integrity. Additionally, the FET array implements ESD protection to protect against damage from electrostatic discharge.

In conclusion, the SQ 4961EY-T1-GE3 is an ultra-low capacitance FET array manufactured by Intersil Corporation. The FET array is designed for a wide range of applications, such as automotive and industrial control, power management, and power switching. Its low on-state resistance, low parasitic capacitance, and advanced process technology provide superior switching performance, low power consumption, and signal integrity. Additionally, with its ESD protection, the FET array ensures maximum protection against damage from electrostatic discharge.

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