Allicdata Part #: | SQ4946AEY-T1_GE3TR-ND |
Manufacturer Part#: |
SQ4946AEY-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 60V 7A |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 7A 4W Surface ... |
DataSheet: | SQ4946AEY-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 7A |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
Power - Max: | 4W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQ4946AEY-T1_GE3 is a Field Effect Transistor (FET) array, developed by Tamura Electric Works, LTD. It is a high-performance FET Array, suitable for use as a switching and sensing component in electronic circuits. The SQ4946AEY-T1_GE3 is a four-channel FET, suitable for many applications.
The SQ4946AEY-T1_GE3 consists of four FETs, each with a drain, source and gate. The FETs are arranged in what is called an "array," meaning they are connected together in some way. In this case, the FETs are connected by metal lines, and each FET is isolated from the others by insulating material.
The SQ4946AEY-T1_GE3 is a low-noise FET array, suitable for use in a range of applications. It can be used for high-speed switching, as well as for sensing of changes in a variety of signals. Since the FETs can be controlled individually, the device can be used for controlling multiple signals, or for multiplexing signals. In addition, the FETs can be operated in parallel, meaning the device can be used for higher currents.
The SQ4946AEY-T1_GE3 can be used in a range of different applications. It is suitable for use in power supplies, high-speed switching, and signal processing. The device is also suitable for use in automotive applications, and can be used as a power MOSFET in DC/DC converters. In addition, the device can be used as an input stage in RF amplifiers, as well as a low-noise FET array in consumer electronics.
In terms of working principle, the SQ4946AEY-T1_GE3 works by utilizing the physical properties of FETs. FETs are semiconductor devices, made up of three layers of material: Source, Drain, and Gate. The source and drain are metallic materials, and the gate is made up of a semiconductor material, usually silicon. By applying a voltage to the gate, the current flowing between the source and the drain can be controlled. This is how the SQ4946AEY-T1_GE3 is able to switch and sense signals.
The SQ4946AEY-T1_GE3 is a versatile FET array, suitable for use in a variety of applications. Its low-noise performance and high-speed switching capability make it ideal for sensing and switching tasks in electronic circuits, while its ability to be operated in parallel makes it suitable for higher current applications. With its multiple channel operation, the SQ4946AEY-T1_GE3 is ideal for multiplexing signals, and its physical properties make it suitable for use in power applications and signal processing.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQ4949EY-T1_GE3 | Vishay Silic... | 0.53 $ | 1000 | MOSFET 2 P-CH 30V 7.5A 8S... |
SQ4920EY-T1_GE3 | Vishay Silic... | 0.54 $ | 1000 | MOSFET 2N-CH 30V 8A 8SOMo... |
SQ4937EY-T1_GE3 | Vishay Silic... | 0.36 $ | 1000 | MOSFET 2 P-CHANNEL 30V 5A... |
SQ4946EY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 4.5A 8SO... |
SQ4940AEY-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 8A 8SOIC... |
SQ4946AEY-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 60V 7AMosfet... |
SQ4961EY-T1_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET DUAL P-CHAN 60V SO... |
SQ4917EY-T1_GE3 | Vishay Silic... | -- | 5000 | MOSFET 2 P-CHANNEL 60V 8A... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...