SQJ200EP-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJ200EP-T1_GE3TR-ND

Manufacturer Part#:

SQJ200EP-T1_GE3

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 20A, 60A 27W, ...
DataSheet: SQJ200EP-T1_GE3 datasheetSQJ200EP-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.29212
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Description

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The SQJ200EP-T1 is a type of semiconductor device that uses a field effect transistor (FET). It belongs to a family of devices known as power MOSFET arrays. It is an advanced technology device with a wide range of applications in various fields.

This device is mainly used for power conversion. It is well suited for switching heavy loads in both low and high power applications. It is also used in power circuits for inverters, DC-DC converters, AC-DC converters, PFC (power factor correction) circuits, and other power conversion circuit designs. The device is also used in telecommunications and computer-aided circuit design.

The SQJ200EP-T1 is a MOSFET array device comprising of 3 N-mos transistors, each with a drain, source, and gate. It consists of two independent N-channel MOSFETs and a single MOSFET, with the middle MOSFET joined in series with one of the end transistors. All three transistors are connected to the same gate electrode. The device works on the principle of source-drain voltage control, wherein the voltage applied to the gate electrode will determine the source-drain current.

The device is well suited for its applications due to its low on-resistance and low gate charge. This enables improved power conversion efficiency, as the device turns on (conducts) more quickly and at lower gate voltages than traditional MOSFETs. It also helps to reduce power loss and heat, as the on-resistance of the device is lower than other MOSFETs.

The device’s output can be controlled by the gate voltage, with a low gate voltage resulting in a low output current, while a high gate voltage will result in a high output current. The current can be adjusted by changing the voltage applied to the gate electrode. This makes the device ideal for a wide range of power conversion applications.

The SQJ200EP-T1 is also easy to mount as it comes in a compact SMD package. It is a highly reliable device with a long life, making it suitable for a variety of industrial applications.

The SQJ200EP-T1 is a versatile device that can be used for a wide range of applications. It is suitable for use in high power circuits, such as inverters, DC-DC converters, AC-DC converters, PFC circuits, and other power conversion applications. It is a highly reliable device with a long life, making it suitable for a variety of industrial applications.

The specific data is subject to PDF, and the above content is for reference

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