SQJ202EP-T1_GE3

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The SQJ202EP-T1_GE3 is subsumable into the category of Array MOSFETs. It is a general-purpose MOSFET, designed to minimize on-state resistance. This allows for great power densities in small areas, making it an excellent choice for a wide range of applications.

The versatile SQJ202EP-T1_GE3 is ideal for use in DC/DC converters, motor drives and Class D audio amplifiers. It serves as the first stage of power MOSFETs in multilevel inverters and yields low gate charge and output capacitance. The device features a maximum drain-source voltage of 100V and is suitable for powering a variety of energy-efficient home appliances.

The SQJ202EP-T1_GE3 is a depletion type MOSFET, which can operate in either depletion mode (normally off) or enhancement mode (normally on). In depletion mode, a negative gate voltage is applied to the device to reduce or prevent conduction from the source to the drain. In enhancement mode, positive voltage is applied to the gate to turn on the transistor.

The drain-source breakdown voltage of the SQJ202EP-T1_GE3 is 100 V. The device can tolerate a maximum drain current of 10A and its maximum drain-source on-state resistance is 0.082 ohm. The device also features a high forward transfer admittance, thermal resistance junction-to-ambient (RJA) of 44°C/W and a maximum drain-source leakage current at VDS = 25V of only 1µA.

The device also has a low reverse transfer capacitance of 7.2pF, making it an excellent choice for switching applications in which fast switching rates are required. The low gate threshold voltage of 4V allows for a wide variety of gate voltage possibilities for driving the device.

In terms of power management, the SQJ202EP-T1_GE3 can operate in either standby-mode or high-power mode. In standby-mode, the device is powered only in pulses with reduced current, while in high-power mode, it conducts with a high-on-state current. Furthermore, features such as temperature rating, fast recovery times and low EMI levels increase the SQJ202EP-T1_GE3\'s suitability as an array MOSFET.

In conclusion, the SQJ202EP-T1_GE3 is an excellent choice for applications that require low-on resistance, fast switching performance and high-power management. It features a drain-source breakdown voltage of 100V and a maximum drain current of 10A, making it capable of powering a variety of large or small appliances. Its low gate threshold voltage, low reverse transfer capacitance, low EMI levels, temperature rating and fast recovery times make it suitable for a variety of power management applications.

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