SQJ244EP-T1_GE3

Series:	Automotive, AEC-Q101, TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual) Asymmetrical
FET Feature:	Standard
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs:	11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 25V, 2800pF @ 25V
Power - Max:	27W (Tc), 48W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	PowerPAK® SO-8 Dual
Supplier Device Package:	PowerPAK® SO-8 Dual Asymmetric

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The SQJ244EP-T1_GE3 is a high performance eld effect transistor (FET) array that is designed and manufactured by several semiconductor companies, including the famous Fairchild Semiconductor. It is available in a wide variety of packages, including SMD, SOT-223, SOT-523 and TO-220 packages. It has characteristics of low input capacitance and high speed switching. It also features an integrated gate voltage sensing circuit that allows for easy adjustment of the gate voltage to match the characteristics of the load.Application Field of SQJ244EP-T1_GE3The SQJ244EP-T1_GE3 is a general-purpose FET array that is specifically designed for applications in high power switching, high speed switching, and high voltage switching. It is commonly used in high-voltage applications, such as DC/DC converters, motor control, and power supply design, as well as in DC/AC inverters and AC/DC converters. Furthermore, it is suitable for a wide range of applications in communications, instrumentation, and other industrial and consumer products.Working Principle of SQJ244EP-T1_GE3The SQJ244EP-T1_GE3 has a MOSFET conductivity of protection. This protection is provided by its integrated gate voltage sensing circuit. It uses a voltage-controlled device using built-in threshold voltage control, which ensures that the FET device operates within specified threshold voltage ranges. It helps prevent the gate voltage from over-stressing and damaging the device.The SQJ244EP-T1_GE3 also features an integrated source-drain protection. This protection is provided by its integrated high-side and low-side source-drain voltage protection circuits. These circuits protect the device from excessive source and drain voltage. Thus, the device operates safely and with high reliability.In addition, the SQJ244EP-T1_GE3 also features a low turn-on voltage and a fast turn-off time. This feature eliminates the need for a bias voltage in most applications. The device also has low power consumption, making it suitable for a variety of applications.ConclusionIn conclusion, the SQJ244EP-T1_GE3 is a reliable and cost-effective FET array with a wide variety of functional features. It is specifically designed for use in high voltage applications and its integrated protection circuits ensure that it operates safely and with high reliability. Furthermore, its low power consumption and fast switching times make it suitable for a range of applications in consumer, industrial, and communication fields.

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