SQM40010EL_GE3 Allicdata Electronics
Allicdata Part #:

SQM40010EL_GE3TR-ND

Manufacturer Part#:

SQM40010EL_GE3

Price: $ 1.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 120A D2PAK
More Detail: N-Channel 40V 120A (Tc) 375W (Tc) Surface Mount D²...
DataSheet: SQM40010EL_GE3 datasheetSQM40010EL_GE3 Datasheet/PDF
Quantity: 1000
800 +: $ 1.09205
Stock 1000Can Ship Immediately
$ 1.2
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 17100pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQM40010EL_GE3 is a single p-channel MOSFET, a type of transistor that can control the flow of current. It is ideal for use in applications that require precise low power switching, such as current sensing, motor control and signal switching. This particular model is able to handle up to 10A continuous drain current and 40V drain-source blocking voltage.

The working principle of the SQM40010EL_GE3 is based on the transfer of electrons between its source and drain terminals. When the gate voltage of the transistor is greater than the source voltage, the transistor is turned on. This allows electrons to flow freely between the source and drain terminals. When the gate voltage is less than the source voltage, the transistor is turned off, effectively blocking the flow of electrons.

The SQM40010EL_GE3 can be used in a variety of applications, including in logic-level switching devices, power management circuits and computer interfaces. It can be used for both low voltage and high voltage applications, depending on the user’s requirements. Some common applications for the SQM40010EL_GE3 include transistor inverters, logic circuits and static memory. It can also be used in switching regulators, motor control applications, motor control circuits and DC-to-DC converters.

The SQM40010EL_GE3 has a package that is compatible with most circuit board layouts. It can be safely dissipate up to 4.5W of power without any external components, making it an ideal choice for low power applications. The extended drain-source breakdown voltage of the transistor also allows it to handle high voltage stresses, making it a suitable choice for industrial applications.

The SQM40010EL_GE3 is a reliable and efficient transistor that can be used in various applications. Its low power capabilities, extended breakdown voltage and compatibility with a wide range of circuit boards make it an ideal choice for a variety of low power switching applications. It is perfect for use in current sensing, motor control and signal switching applications, as well as for logic-level switching, power management and computer interfaces.

The specific data is subject to PDF, and the above content is for reference

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