SQM40N10-30_GE3 Allicdata Electronics
Allicdata Part #:

SQM40N10-30_GE3-ND

Manufacturer Part#:

SQM40N10-30_GE3

Price: $ 0.84
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 40A TO263
More Detail: N-Channel 100V 40A (Tc) 107W (Tc) Surface Mount TO...
DataSheet: SQM40N10-30_GE3 datasheetSQM40N10-30_GE3 Datasheet/PDF
Quantity: 1000
800 +: $ 0.75552
Stock 1000Can Ship Immediately
$ 0.84
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3345pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQM40N10-30_GE3 is a single general-purpose N-channel enhancement type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), part of a larger electronic family of semiconductor systems and devices.

General-purpose MOSFETs like the SQM40N10-30 are primarily used as signal or power switches in advanced logic and discrete electrical systems, usually in connection with other FETs and/or components, found on power management and control boards. These types of transistors are also used increasingly in intelligent relay input/output processing circuits in industrial automation and control systems.

The SQM40N10-30_GE3 is a 60 V gate threshold, 100 amp rated MOSFET with a maximum drain-source voltage of 30 volts and maximum drain current of 8 amps. It is built on a 4.4mm size die and is available in a variety of packaging options for easy implementation into your system. The MOSFET is rated for an ambient temperature of up to 25°C.

The working principle behind the SQM40N10-30_GE3 MOSFET is its gate-controlled ability to conduct current between its drain and source pins. When a gate voltage is applied to the gate terminal, it creates an electric field between the gate and source terminals, resulting in a ‘pinch-off’ of current between the source and drain pins. A greater gate voltage gives greater control over the current flowing. The current gain of the MOSFET is determined by its source-drain voltage and gate voltage, which increases exponentially as the gate voltage is increased.

The SQM40N10-30_GE3 is ideally suited for controlling higher currents with only a small input signal, making it perfect for applications such as power supplies and load switches. Additionally, due to its enhanced performance characteristics, this particular type of FET is well-suited for high-performance circuit design. Its high frequency capability is ideal for PWM (Pulse Width Modulation) speed control circuits and other switching regulators.

The SQM40N10-30_GE3 is also popular due to its robust construction and low ON-resistance, making it suitable for high power circuits and amplifiers as well as for switching and signal conditioning/processing. It is also suitable for general digital switching applications ranging from low currents to higher current applications. These unique features, along with its low cost, make it a popular choice in a variety of applications.

The SQM40N10-30_GE3 is a convenient and versatile single MOSFET perfect for a variety of applications ranging from power management and control boards to digital switching and PWM speed control circuits. Its enhanced performance characteristics and low ON-resistance make it ideal for high power circuits and amplifiers, while its robust construction and versatile packaging options provide a reliable, cost effective choice in many applications.

The specific data is subject to PDF, and the above content is for reference

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