SR109HB0G

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Diodes - Rectifiers - Single

The SR109HB0G is a single-phase silicon rectifier diode that belongs to the Diodes - Rectifiers - Single product family. It is designed for general-purpose applications and manufactured on STMicroelectronics high-performance processes. This diode allows for current to flow in one direction only, generating an output voltage dropping. Its innovative design and advanced technology allow for smoother and higher switching performance. Additionally, its low forward voltage, low power loss and high current rating enable high efficiency and low noise operation.

General Description:

The SR109HB0G is a single-phase, ultrafast silicon rectifier diode. This diode can be used in applications such as switching power supplies, inverters, converters, and motor drives. The diode is packaged in a small TO-252 (D-Pak) and offers a frequency range of up to 900kHz. This diode features low forward voltage and surge current handling capabilities as well as a reliable, low failure rate.

Electrical Characteristics:

The SR109HB0G has a forward voltage drop of 0.21V, a reverse voltage of 70V, a peak current rating of 5A, and a surge current of 60A. It has a peak surge current of 70A, a capacitance of 70 nF, and a junction temperature of 150°C. Its maximum reverse recovery time is provided at 1μs and its leakage current is provided at a maximum of 10 μA.

Applications:

The SR109HB0G is suitable for use in switching power supplies and other power controller circuits. It can be used in automotive and industrial applications and is also suitable for use in medical and consumer electronics. It can be used in lighting and in solar inverters, and it is also suitable for automotive and industrial motor drives.

Working Principle:

The SR109HB0G is a single-phase, ultrafast silicon rectifier diode. It operates according to the PN junction principle by allowing current to flow in only one direction. This is due to the carefully structured junctions of P and N type semiconductors that are used in the diode. When forward-biased, current is able to flow from P to N, while it is prevented from flowing in the opposite direction by the PN junction. When reverse-biased, the PN junction is highly resistant and therefore the current does not flow.

Advantages:

The SR109HB0G is designed with advanced technology to offer a variety of advantages for applications such as switching power supplies, inverters, converters, and motor drives. Its small package size and low forward voltage drop reduce power consumption and minimize the thermal footprint of the device. Additionally, the diode has a higher frequency range of up to 900kHz. This allows for smoother and faster operation with minimal losses and noise. Furthermore, its low failure rate ensures reliable performance and operation.

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