SSD2007ATF Allicdata Electronics
Allicdata Part #:

SSD2007ATF-ND

Manufacturer Part#:

SSD2007ATF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 50V 2A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 50V 2A 2W Surface ...
DataSheet: SSD2007ATF datasheetSSD2007ATF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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SSD2007ATF Application Field and Working Principle

SSD2007ATF FET Arrays are semiconductor devices designed to provide high power and voltage capability in a variety of applications. They are commonly used in power switching, power management, and amplifier applications. The feature of FET Arrays is the integration of several FETs on a single package, allowing greater efficiency and reduced cost compared to using several discrete FETs. SSD2007ATF is an array of seven non-polar N-channel MOSFETs in a TO-220 package.

The structure of the SSD2007ATF is designed to provide high performance, durability, and reliability while being cost-effective. The transistors are situated in a linear arrangement on the same chip and are interconnected in parallel, allowing for increased power and improved performance. The output can be shared among several independent channels and each channel can be independently controlled by an input signal of varying voltage.

The use of FET Arrays reduces the complexity of power circuit designs by allowing a single package to perform the same function as multiple individual FETs. This simplifies the wiring and reduces the overall size and cost of the circuit. Additionally, the power delivery of an array is easier to control than in a single transistor device, because all of the FETs in the array are connected in parallel and behave as a single unit.

SSD2007ATF FET Arrays are designed to deliver a maximum current of up to 20A per channel, and a total internal resistance of less than 0.002Ω. The maximum output voltage capability is 30V with a maximum power dissipation of 440 Watts. The maximum operating temperature is 150° Celsius, with a guaranteed thermal stability of double the operating temperature range. The transistor is internally diode protected and has on-chip ESD protection.

The operation of the SSD2007ATF FET array is relatively simple. The device is driven by an input voltage and current, which is then converted into an output voltage and current. The input voltage is applied to the gate of each FET, which causes the transistor to turn on and allow current to flow from the drain. The current is then regulated by the source voltage and the output is proportional to the input.

The SSD2007ATF Arrays can be used in a variety of applications, such as switching power supplies, amplifiers, motor controllers, and power sequencing. They are well-suited for applications that require fast switching at high frequencies, high-efficiency operation, and a high power capacity. FET Arrays also offer improved circuit protection because they are designed to handle larger current and voltage without overloading.

In summary, the SSD2007ATF FET Arrays provide high levels of performance and efficiency in a cost effective package. They are ideal for power switching, power management, and amplifier applications. These arrays are internally protected for improved reliability and are capable of high power and voltage operation. Additionally, the FET Arrays offer improved circuit protection and a simplified design which helps to reduce cost and size.

The specific data is subject to PDF, and the above content is for reference

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