SSD2025TF

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The n-channel SSD2025TF MOSFET array is a power management semiconductor device. In particular, it is a high-voltage, low-power MOSFET, suitable for different applications such as power switching, motor control, and solenoid control.

The array consists of six transistors all tied together in a package housing, allowing for a more compact design and easier integration into systems. Each transistor has its own separate gate, drain, and source pins which can be used for individual or parallel switching between each MOSFET in the array.

The common gate of the array is the connection between the gate of all six devices, allowing for a single voltage level to control all six MOSFETs. This voltage level is also used to set up the threshold voltage of the array. This allows the user to set the switching threshold as needed.

The SSD2025TF MOSFET array is suitable for applications such as switching current in relays, contactors and solenoids, as well as drive circuit design of DC motors and stepping motors. In addition, the device is suitable for high side switching in a wide range of industrial, automation, and consumer applications.

The MOSFETs used in the array have a V_DSS rating of 25 Volts and an R_DS(ON) of 620mΩ. This high voltage rating and low on-resistance make the device a highly efficient power switch. The MOSFETs also feature a very low gate-source capacitance which makes them suitable for high-frequency switching applications.

The MOSFETs of the array are arranged in the following combination: three p-channel MOSFETs and three n-channel MOSFETs. This arrangement allows for the device to be configured for both low-side and high-side switching.

The device is protected against electro-static discharge (ESD) with an integrated ESD protection circuit on all six gate pins. This ensures that the device is protected against sudden high voltage transients, preventing damage to the MOSFETs of the array.

The working principle of the device is straightforward. When a voltage is applied to the gate of the device, it switches the MOSFET to the high-side, thus allowing current flow between the drain and the source. The device stays in this state until the voltage applied to the gate is removed, at which time it switches back to the low-side and the current flow between the drain and source is blocked.

The SSD2025TF MOSFET array is a versatile power management device suitable for a wide range of applications. Its wide voltage rating, low on-resistance and low gate-source capacitance make it suitable for high-frequency switching applications. The integrated ESD protection ensures the safety of the device and prevents damage in the case of unexpected voltage transients.

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