SST11CP15E-XXBE Allicdata Electronics
Allicdata Part #:

SST11CP15E-XXBE-ND

Manufacturer Part#:

SST11CP15E-XXBE

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Microchip Technology
Short Description: IC RF PWR AMP 802.11A/N 12X2QFN
More Detail: RF Amplifier IC 802.11a/n 4.9GHz ~ 5.9GHz 12-UQFN ...
DataSheet: SST11CP15E-XXBE datasheetSST11CP15E-XXBE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Frequency: 4.9GHz ~ 5.9GHz
P1dB: --
Gain: 27dB
Noise Figure: --
RF Type: 802.11a/n
Voltage - Supply: 3 V ~ 5 V
Current - Supply: 290mA
Test Frequency: --
Package / Case: 12-UFQFN Exposed Pad
Supplier Device Package: 12-UQFN (2x2)
Description

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The SST11CP15E-XXBE is an RF Amplifier that can be used for a variety of applications. This device is capable of providing high performance, and can work with a wide range of frequencies. It is a popular choice for applications that require a high level of performance and reliability. In this article, we will examine the application field and working principle of SST11CP15E-XXBE

Application Field of SST11CP15E-XXBE RF Amplifier

The SST11CP15E-XXBE RF Amplifier is used in a variety of applications such as radio communications, broadcast, video, audio, and other similar applications. It is also used in mobile radio, RF welding, and industrial applications such as wireless power transfer. This device is capable of providing a high gain, linearity, and flat frequency response with low distortion.

The SST11CP15E-XXBE RF Amplifier has a wide power range, allowing it to be used in a variety of applications. It is designed to handle frequencies up to 6GHz, providing a very wide bandwidth. This gives the device the ability to be used in many different types of applications that require both wide bandwidth and high power output.

Working Principle of SST11CP15E-XXBE RF Amplifier

The SST11CP15E-XXBE RF Amplifier works on a principle that is similar to other RF amplifiers. It is based on a Gilbert cell circuit, which is a single ended input amplifier. The amplifier has two stages, one for amplification and one for buffering. The first stage amplifies the signal while the second stage provides power gain. This allows the amplifier to provide a high level of gain, linearity, and flat frequency response with low distortion.

The SST11CP15E-XXBE RF Amplifier uses an inductive transformer to produce an impedance transformation. It also uses metal oxide semiconductor (MOS) transistors in the chip for optimum performance. The device also features an Al-GaAs (aluminum gallium arsenide) substrate for improved thermal capabilities. All of these components work to provide high performance and reliability.

The SST11CP15E-XXBE supports a wide range of frequencies from 50MHz to 6GHz. This allows the device to be used for a variety of applications. It can be used for broadcast, video, radio communications, audio, and other similar applications. The device can also be used for industrial applications, such as wireless power transfer, and RF welding.

The SST11CP15E-XXBE provides a high gain, linearity, and flat frequency response with low distortion. This makes it an ideal choice for applications that require high performance and reliability. It is a popular choice for applications that require a high level of performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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