SST174-E3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Voltage - Breakdown (V(BR)GSS):	30V
Current - Drain (Idss) @ Vds (Vgs=0):	20mA @ 15V
Voltage - Cutoff (VGS off) @ Id:	5V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds:	20pF @ 0V
Resistance - RDS(On):	85 Ohms
Power - Max:	350mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236

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Introduction

The SST174-E3 is a semiconductor device that is used in various applications. It is a JFET (Junction Field Effect Transistor), which is an unipolar field effect transistor. It offers enhanced performance in both high voltage and low voltage circumstances. As such, it is an ideal choice for power amplification, analog signal conditioning, and light sensing. It is available in both through-hole and surface mount packages.

Application

SST174-E3 is commonly used for power amplifiers and motor control applications. Its rugged construction and high blocking voltage makes it suitable for high voltage applications. It can also be used in light sensing applications. Its high gain and high output current makes it perfect for audio amplifier applications, as well as analog signal conditioning. The SST174-E3 is also capable of temperature sensing, so it can be used in temperature controlled systems. Its fast switching time makes it ideal for high speed digital circuits and data transmission systems.

Selection Criteria

When selecting the appropriate SST174-E3 device, it is important to consider several parameters. These parameters include the amount of current needed to operate the device, the frequency of the device, its breakdown voltage, the temperature range of operation, and the maximum power the device can handle. It is also important to consider other factors such as channel configurations, packaging options, environmental considerations, and the cost of the device.

Working Principle

The SST174-E3 uses a process known as the gate and drain effect. This effect requires the application of a gate voltage to the gate terminal of the device. This voltage helps create a low-resistance channel between the electrodes, allowing current to flow through the device. As this voltage increases, the current is also increased.The amount of current needed to operate the SST174-E3 is dependent on the drain-to-source resistance. When designing with the SST174-E3, it is important to account for the gate voltage, the drain voltage, and the gate current to ensure the device operates properly.The SST174-E3 is a versatile, reliable, and cost-effective device. With its low-power consumption and rugged construction, it is suitable for a variety of applications such as motor control, high voltage circuits, and light sensing. Its high blocking voltage and fast switching time make it suitable for high speed digital circuits and data transmission systems.

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