Allicdata Part #: | SST204-T1-E3-ND |
Manufacturer Part#: |
SST204-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET N-CH 25V 0.35W SOT-23 |
More Detail: | JFET N-Channel 25V 350mW Surface Mount SOT-23 |
DataSheet: | SST204-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 200µA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 4.5pF @ 15V |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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The SST204-T1-E3 is a high-performance, high-frequency, surface mount junction field effect transistor (JFET). It is typically used as a low-level amplifier, audio amp, and mixer. This transistor is constructed from silicon, and is designed for operation in the temperature range of -30 to +150 degrees Celsius. This device requires very little current and is reliable in its operation.
The SST204-T1-E3 has two source connections and two gate connections. The source connections are used to connect the input and output signals, while the gate connections are used to control the amplification of the signals. The device has an extremely wide frequency response, allowing for a wide range of audio frequency inputs. This makes it an ideal transistor for pre-amplification and RF applications.
The SST204-T1-E3 offers excellent performance with high gain, low noise and low input capacitance. The device is also highly stable and can operate up to 150MHz. This makes the device suitable for applications such as RF mixers, RF amplifiers, and voltage-controlled oscillators. It is also used in a wide range of consumer electronics such as televisions, portable audio equipment, and home appliances.
The working principle of the SST204-T1-E3 is based on the physical operation of a junction field effect transistor. When a negative voltage is applied to the gate electrode, it creates a depletion region in the channel between the two source electrodes. This depletion region acts to reduce the current that can flow between the source electrodes, resulting in a decrease in the output current. Conversely, when a positive voltage is applied to the gate, the depletion region is reduced, allowing more current to flow between the source electrodes.
The SST204-T1-E3 is a reliable and efficient device for various applications, and is suitable for use in a wide range of consumer electronics. It has a wide frequency range and is capable of working up to 150MHz, making it an ideal device for applications where high performance and low noise are required. It is constructed from silicon, making it an inherently reliable device, and is designed to operate in temperatures ranging from -30 to +150 degrees Celsius.
The specific data is subject to PDF, and the above content is for reference
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