SST25VF512A-33-4I-QAE

Series:	SST25
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	512Kb (64K x 8)
Clock Frequency:	33MHz
Write Cycle Time - Word, Page:	20µs
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON
Base Part Number:	SST25VF512A

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Memory: SST25VF512A-33-4I-QAE Application Field and Working Principle

The SST25VF512A-33-4I-QAE is a Serial-Peripheral Interface (SPI) Flash memory device that can be used to store information permanently, even after power is removed. It is an excellent choice for applications that require a high-density, low-power, cost-effective memory solution, such as automotive, industrial, and consumer devices.

Overview

The SST25VF512A-33-4I-QAE is a 5Mbit Flash memory device with 64Kbytes organized into 128 pages of 256 bytes each. It has a 1.8V to 3.6V voltage range, with 1.8V and 3.3V single-voltage support, and operates over a wide range of temperatures from -40°C to 85°C. It features a fast 8-bit, or 4-bit, Parallel interface with a mechanical write protect pin for robust anti-corruption, power fatigue protection, and reliable write performance. The SST25VF512A-33-4I-QAE is integrated with an on-board advanced quality of service (QoS) engine to provide much higher data integrity and flawless operation in applications subjected to high levels of vibration and shock that are typical in automotive and industrial mission-critical applications.

Application Field

The SST25VF512A-33-4I-QAE is suitable for a variety of applications, including automotive, industrial, and portable devices. It offers outstanding electrostatic discharge (ESD) protection and robust data retention, which makes it perfect for harsh operating environments. It also provides a low power alternative to SRAM or DRAM memory solutions, which makes it well-suited for battery powered devices. Additionally, it is ideal for non-volatile memory applications such as storing device configuration information, storing sensor readings and logging data, or firmware storage.

Working Principle

The SST25VF512A-33-4I-QAE is accessed via an 8-bit or 4-bit Parallel interface and accessed via a single-line serial interface compatible with the Serial Peripheral Interface (SPI). Data is transferred to and from the device in bytes, words, or full pages (up to 128 bytes). The device features command-based operation to achieve fast access times and lower power consumption, allowing for low-latency, on-demand access to the memory.The device has an on-chip write cycle accelerator to support high-speed write operations. The SST25VF512A-33-4I-QAE also features an on-board advanced QoS engine to provide higher data integrity and improved system performance in applications subjected to high levels of vibration and shock.

Conclusion

The SST25VF512A-33-4I-QAE is an excellent choice for applications that require high-density, low-power, and cost-effective memory solutions. It is suitable for a wide variety of applications, including automotive, industrial, and portable devices, and offers outstanding ESD protection and robust data retention for harsh operating environments. Additionally, it features an on-chip write cycle accelerator and an advanced QoS engine for high-speed write operations and superior data integrity.

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