Allicdata Part #: | STK22C48-NF45I-ND |
Manufacturer Part#: |
STK22C48-NF45I |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 16K PARALLEL 28SOIC |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 16Kb (2K x 8)... |
DataSheet: | STK22C48-NF45I Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 16Kb (2K x 8) |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 28-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 28-SOIC |
Base Part Number: | STK22C48 |
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Memory
The STK22C48-NF45I is a type of memory integrated circuit that has application across many different industries. This device is a non-volatile, three-dimensional memory array chip and operates using the 4-Mbit super-fast magnetoresistive random-access memory (MRAM) architecture. This novel, multi-bit technology allows for high-speed operation and extremely low power consumption.
A memory device such as the STK22C48-NF45I is used to store data and information for future access and retrieval. This type of device is used for computer architectures and embedded systems and can also be used for server, fax and mobile phone applications. The STK22C48-NF45I has extensive application in the fields of aerospace, automotive, telecommunications, industrial automation, medical instrumentation, and consumer electronics.
The STK22C48-NF45I utilizes a combination of magnetic and electrical properties to achieve its function. It stores data using alternate states of magnetization or electrical charge in each memory cell, rather than using the conventional method of transistors-charged to represent binary zeros and ones. This technology is superior to traditional memory designs because it utilizes smaller memory cells and offers higher speed, lower energy consumption and better reliability.
At the heart of the device is the 4-Mbit MRAM array with an array of 4-Mbit columns and 4-Mbit rows. Every bit in the array is controlled by four bits of control logic, which translates data into both column and row addresses. The control logic also allows for multiple memory accesses. The array also features a multiplexer which allows for constant current flow from a single source to the memory cells.
To read data from the STK22C48-NF45I, a write signal is applied to the corresponding memory cell. This signal causes the bit of information stored in the cell to be written to the data port. To write data to the STK22C48-NF45I, a read signal is applied to the corresponding memory cell that causes the bit of information to be read from the data port back into the corresponding memory cell. This process is then repeated for each bit of data being written or read.
In addition to using its advanced 4-Mbit MRAM array, the STK22C48-NF45I uses digital I/O, analogue I/O and a JTAG interface to communicate with the external world. The device is powered by an I2C interface, which allows it to communicate with other buses or systems. This device also includes an Error Correction Circuit (ECC) that provides data reliability and correction in situations when the memory cells are affected by noise.
The STK22C48-NF45I is a versatile and robust integrated circuit that offers superior performance when compared to traditional DRAM and SRAM. Its combination of magnetic and electrical properties and its advanced memory array architecture offers high reliability and very low power consumption and make it an ideal solution for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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