STK20N75F3

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The STK20N75F3 is a high-performance N-channel enhancement-mode Field-Effect Transistor (FET). It features a large current capability, a high-speed switching time, and low on-state resistance. It is widely used in a variety of applications, such as power supplies, switching regulators, and other control circuits.

The STK20N75F3 is a vertical DMOS N-channel FET that utilizes the company’s advanced DMOS process. This process weighs less than conventional lateral MOSFETs, which allows it to be more compact and less susceptible to thermal problems. It also offers a much higher RDS(on) rating and efficient power delivery, making it an ideal choice for a variety of power supply, switching and control applications.

The STK20N75F3 is a vertical DMOS FET with a peak drain-source voltage of 200V and an on-resistance of 1.2mOhms at a Vgs of 4.5V. It has a maximum current rating of 20A and a drain-source breakdown voltage of 200V.

The STK20N75F3 is designed to provide high-speed switching and low on-state resistance in a variety of applications. It has a low gate-to-source capacitance and a fast turn-on time for high-frequency switching applications. The STK20N75F3 features robust packaging, allowing for mounting on printed circuit boards with minimal distortion. Additionally, the device has a low drive voltage and is backward compatible with a wide range of gate drivers.

The working principle of the STK20N75F3 is based on the MOSFET. A metal–oxide–semiconductor field-effect transistor (MOSFET) is an insulated-gate field-effect transistor (IGFET), a device whose conductivity is controlled by an electric field. Compared to a bipolar junction transistor (BJT), a MOSFET has higher transconductance and a larger current capacity, making it ideal for high-power applications. In order to work, a MOSFET must be connected to a positive voltage source at its source and to a negative voltage source at its drain.

When the voltage at the gate is raised, it creates an electric field in the region of the channel known as the depletion layer. This electric field attracts electrons from the source towards the gate, thereby preventing any current from flowing through the channel and turning off the transistor. When the source voltage is taken away, current can again flow through the channel.This is the basic operation principle of the STK20N75F3.

The STK20N75F3 is ideal for a wide range of applications where a high current handling and rapid switching are required. It is often used in power supply circuits, DC-DC converters, motor control systems, and switching regulators. It is also used in a variety of other applications such as logic level converters, gate drivers, and load switches. With its low on-resistance, fast switching time, and high-current handling capabilities, the STK20N75F3 is the perfect choice for a variety of applications.

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