Allicdata Part #: | STK22C48-NF45TR-ND |
Manufacturer Part#: |
STK22C48-NF45TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 16K PARALLEL 28SOIC |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 16Kb (2K x 8)... |
DataSheet: | STK22C48-NF45TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 16Kb (2K x 8) |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 28-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 28-SOIC |
Base Part Number: | STK22C48 |
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The STK22C48-NF45TR is a device that belongs to the family of volatile memory products. It is composed of a four-layer stacked structure of an insulating film and an anisotropic conductive film. This memory has the advantages of large-capacity collocation data and low power consumption. STK22C48-NF45TR is widely used in industry and can store large-capacity data. It is widely used in industrial control, information processing, enterprise information systems and other fields.
STK22C48-NF45TR is commonly used as a non-volatile memory for data storage in embedded systems. It is composed of two layers of anisotropic conductive film and two insulating layers. This structure makes it advantageous for achieving a high packing density and relatively low power consumption specifications, compared with traditional FLASH storage technologies. The STK22C48-NF45TR memory is available in two capacities, 4Mbytes and 8Mbytes, and a variety of protocol types, i.e., Serial Peripheral Interface (SPI), Universal Serial Bus (USB), Serial Advanced Technology Attachment (SATA), and other communication standards.
The STK22C48-NF45TR memory also features a self-refreshing feature, which helps the memory to maintain data during periods of power interruption, when the power is cycled, or when the system enters low-power sleep modes. The self-refreshing feature is also used to keep track of error modes and writes to secure data, ensuring safe operation of all the memory systems.
The working principle of the STK22C48-NF45TR memory is relatively straightforward. When power is applied to the device, the two layers of anisotropic conductive film are activated and an electrical current flows from the anodic to cathodic side, indicating that data is stored in the form of a charge coupled device (CCD). In the absence of power, the anodically charged data is held in the memory, allowing for retention of data even when the system is powered off. When the system is powered on, the CCD is released, allowing for the data to be read out.
The STK22C48-NF45TR memory also features a write protection and data protection features. The write protection feature helps protect the memory cells from accidental or malicious data overwrites, while the data protection feature prevents data stored in the memory from being read or modified without permission.
The STK22C48-NF45TR memory is also capable of error correction coding with parity or parity and combination codes, allowing for reliable operation even in the presence of errors. This feature is especially useful for embedded systems, ensuring that data written to the system is preserved and kept intact.
The STK22C48-NF45TR memory is ideally suited for use in embedded applications, where robust error correction and self-refreshing features are of paramount importance. It is designed to deliver reliable and high quality performance, while remaining cost-effective. The memory is especially suited to embedded systems that require low power consumption during low activity periods, as well as during normal operations.
The specific data is subject to PDF, and the above content is for reference
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