Allicdata Part #: | 497-15314-2-ND |
Manufacturer Part#: |
STL40C30H3LL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N/P-CH 30V POWERFLAT |
More Detail: | Mosfet Array N and P-Channel 30V 40A, 30A 60W Surf... |
DataSheet: | STL40C30H3LL Datasheet/PDF |
Quantity: | 1000 |
Series: | STripFET™ VI |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 40A, 30A |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 475pF @ 24V |
Power - Max: | 60W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
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Introduction
The STL40C30H3LL is a silicon-based, large N-channel MOSFET array integrated circuit (IC). It is manufactured by STMicroelectronics. The device is generated with N-Channel MosFets which can be readily accessed as jumperless single products or as a large array. It is commonly used in industrial and commercial applications requiring high-power and high-speed surface mount devices such as robotic and power management systems.
Application fields
The STL40C30H3LL integrated circuit is most often used in high-power and high-speed applications. Some common applications include power switching and motor control such as brushless DC (BLDC) motors, power management systems, power inverters, and voltage regulators. The device is rated to handle currents up to 30A and voltage up to 600V. The device also has a low on-resistance property and a maximum drain-source breakdown voltage rating of 600V, making it perfect for handling high-voltage and high-power applications.
Working principle
The STL40C30H3LL is an array of N-channel MOSFETs which are constructed from various different techniques including Breakdown Voltage (BV) protection, differential protection, overcurrent protection, and output impedance control. Each individual MOSFET features a Schottky diode for protecting against reverse-bias conditions, and is designed to have low on-resistance for efficient operation. The device also features a high drain-source breakdown voltage, making it ideal for applications requiring high-voltage switching.
When the device is correctly wired, the MOSFET arrays convert electrical energy into mechanical or digital power. Typically, the device is wired to a power supply, with the ground of the power supply being connected to one of the MOSFETs in the array. When an input signal is applied, the gate of the MOSFET array is powered, allowing current to flow. This current flow then creates an electromotive force (EMF) in the device, allowing it to control the amount of power going to the load, as well as switching on and off as needed.
The large N-channel MOSFET array in the STL40C30H3LL also allows for efficient and high-speed switching, making it ideal for high-power applications. The device is also designed to have a low RDSon for power losses, making it suitable for applications requiring multiple FETs in order to reduce power consumption.
Conclusion
The STL40C30H3LL is a large N-channel MOSFET array integrated circuit which is suitable for a variety of applications requiring high-power and high-speed switching. The device features a number of protections, including BV, differential, overcurrent and output impedance control, making it suitable for a range of applications. The low on-resistance and high breakdown voltage of the device make it a great choice for applications requiring high-voltage and high-power switching.
The specific data is subject to PDF, and the above content is for reference
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