
Allicdata Part #: | 497-13602-2-ND |
Manufacturer Part#: |
STL42N65M5 |
Price: | $ 6.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 4A PWRFLT8X8HV |
More Detail: | N-Channel 650V 4A (Ta), 34A (Tc) 3W (Ta), 208W (Tc... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 5.82382 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4650pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 79 mOhm @ 16.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta), 34A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STL42N65M5 is a Power MOSFET manufactured by STMicroelectronics, which combines very low on-resistance and fast switching for applications in the consumer electronics, lighting, and industrial markets. This FET is designed to have low power dissipation and low gate charge, making it well-suited for use in high-current switching circuits. This FET is a n-channel enhancement mode device and is available in an industry-standard TO-252 (SOT-223) package.
Application Fields
STL42N65M5 is well-suited for use in high-current switching applications, such as motor control, automotive, and high-current safety circuits. It is also suitable for use in AC/DC converters, DC/DC converters, and general power circuits. The TO-252 package makes it easy to mount and makes it suitable for through-hole and surface-mount designs.
Working Principle
The STL42N65M5 is an n-channel enhancement mode power MOSFET. This means that it is normally off and has an enhancement (or enhancement-mode) gate that increases the amount of current that can flow from drain to source. In the off state, the gate (or voltage threshold) is a diode drop below the source voltage, which prevents current from flowing. When the gate voltage is higher than the source voltage, the drain-to-source channel is “enhanced” and current flows.
The STL42N65M5 can handle drain currents of up to 42A and is designed to have a low on-resistance, making it very efficient in power switching applications. Its fast switching time and low gate charge make it well-suited for use in switching applications where low power dissipation and high current handling are required. The FET also has built-in ESD protection and a low internal drain-to-source capacitance, which make it well-suited for use in high-speed switching circuits.
The specific data is subject to PDF, and the above content is for reference
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