Allicdata Part #: | 497-13535-2-ND |
Manufacturer Part#: |
STL40N75LF3 |
Price: | $ 0.92 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 75V 40A PWRFLT 5X6 |
More Detail: | N-Channel 75V 40A (Tc) 75W (Tc) Surface Mount Powe... |
DataSheet: | STL40N75LF3 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.83137 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STL40N75LF3 is a power field effect transistor (FET), which belongs to a single type of FETs, MOSFETs. It is mainly used as a switching device in power switching circuits, and it can also be used as an amplifier in audio circuits or as an oscillator in feedback circuits. The working principle of this MOSFET is similar to that of a BJT. However, the difference is that the electrical characteristics of FETs are much different from BJTs. The function of FETs is mainly to achieve electrical conduction between two electrodes and can be applied in many different circuits.
The STL40N75LF3 is a N-channel enhancement-mode MOSFET, with a drain source voltage rating of VDS of 75V, a drain current of ID = 18A (Tc = 25°C), and a continuous drain source voltage of VGS(th) of 3V. Its maximum power dissipation is 175W. The balance combination of current, power, and performance makes it suitable for a wide range of power switching applications. This type of FET is most commonly used in telecom and industrial applications because it is suitable for low-voltage and high-current applications.
Due to their low on-state resistance and high current drive capability, this type of power FET can be used as an efficient switch in circuits that require high-power operation. It can be used to switch and control the input power to different systems. The on-state drain-source resistance (RDS) is typically 2.125Ω, which is beneficial in power applications. The rated drain-source voltage VDS and drain current ID are 75V and 2.4A. This allows for the FET to be used in many different circuits due to its excellent power performance. It is also able to operate with a maximum junction temperature of 150°C.
The MOSFET also offers a fast switching speed with a turn-on and turn-off time of up to 50µs. It is also suitable for use in high-speed circuits due to its low gate charge (Qg) and high switching speed, thus making it ideal for power circuits that require high-speed operation. Due to its small size and superior performance, this type of power FET can be used in a variety of applications.
In summary, the STL40N75LF3 is a high-performance N-channel enhancement-mode MOSFET. Its low on-state resistance and high current drive capability make it suitable for applications where high-power operation is required. Its fast switching time and low gate charge allow for it to be used in circuits that require high-speed operation. Due to its superior performance and small size, this type of power FET is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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