STP60N3LH5

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The STP60N3LH5 is a N-channel silicon-gate power MOS-type field effect transistor (MOSFET). This type of transistor is designed for use in a wide range of switching applications from low-power, battery-powered circuits all the way up to high-power, high-voltage power supply regulation. The STP60N3LH5 is specifically designed for applications where high transconductance, fast switching speed, and low on-resistance are required. It is well suited for various power management functions, such as radios, cell phones, smart home appliances, and industrial and consumer electronics.

The STP60N3LH5 incorporates an N-channel MOSFET, which is an insulated-gate field effect transistor (IGFET). This type of transistor is based on the MOS-type field effect transistor (MOSFET) structure and utilizes an insulated gate as a control electrode. The insulated-gate structure provides the advantage of being able to produce a high transconductance and is suitable for high-frequency applications.

The STP60N3LH5 is a single N-channel MOSFET transistor, meaning it has a single N-type source, drain and gate. The source and the drain are connected in series and the gate is connected in parallel with the source-drain path. The gate is the control electrode that is used to regulate the flow of current between the source and the drain. By applying a voltage to the gate, the current flow between the source and the drain can be controlled. The transconductance (ΔI/ΔV) of the device is high and the switching speed is low.

The STP60N3LH5 is manufactured using a high-performance process that has been optimized for a variety of applications, including low voltage, high-speed switching, on-resistance, and fast switching speed. It is well suited for a variety of switching applications. For example, it can be used to control the flow of high-power digital signals or switching multiplexers, as well as low-power, low-frequency digital signals or switching transistors in consumer electronics.

The STP60N3LH5 is available in a variety of different packages, including both through-hole and surface-mount packages. It offers a maximum current rating of 60 A, a maximum voltage rating of 30 V, and a maximum power dissipation of 30 W. It has an on-resistance of 6 Ω and a reverse recovery time of more than 60 ns, making it suitable for fast switching applications.

In summary, the STP60N3LH5 is a single N-channel silicon-gate power MOS field effect transistor. It is designed for use in a wide range of switching applications, from low-power battery-powered circuits all the way up to high-power, high-voltage power supply regulation. It is suitable for high-frequency applications and offers a high transconductance, a low on-resistance, and a fast switching speed. It is available in both through-hole and surface-mount packages and offers a maximum current rating of 60 A, a maximum voltage rating of 30 V, and a maximum power dissipation of 30 W.

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