STP60NF06 Allicdata Electronics
Allicdata Part #:

497-2779-5-ND

Manufacturer Part#:

STP60NF06

Price: $ 1.06
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 60A TO-220
More Detail: N-Channel 60V 60A (Tc) 110W (Tc) Through Hole TO-2...
DataSheet: STP60NF06 datasheetSTP60NF06 Datasheet/PDF
Quantity: 1000
1 +: $ 1.06000
10 +: $ 1.02820
100 +: $ 1.00700
1000 +: $ 0.98580
10000 +: $ 0.95400
Stock 1000Can Ship Immediately
$ 1.06
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STP60NF06 is a level-FET (FET) transistor, commonly used in power management and conversion applications. It is designed for low on-state resistance and low leakage current. This makes the STP60NF06 suitable for applications such as power distribution, power management, and power conversion.

The STP60NF06 is a single N-channel FET. It is made up of four regions, the source, drain, gate and body. The source and drain are the two terminals of the FET, through which electrical current flows when the transistor is ON. The gate controls the current flow, since it is where the voltage is applied, allowing or blocking the flow of current. Finally, the body, or substrate (or bulk) is an electrically insulated material which provides an electrical connection between the source, drain and gate.

The main operating principle of the STP60NF06 is that of the depletion-mode MOSFET. In operation, the FET is always turned off unless the gate voltage is raised above the threshold voltage (Vth). When this happens, the depletion region around the gate shrinks, allowing a small amount of current to flow from source to drain, thereby turning the FET ON. The amount of current that flows is dependent on the gate voltage, ranging from completely off at low gate voltages to completely on at higher gate voltages.

The STP60NF06 is widely used in a variety of applications, such as motor controls, power converters and inverters, voltage regulators, and switching supplies. In these applications, the low on-state resistance, low leakage current, and fast switching speed of the STP60NF06 make it an ideal choice. In addition, the high current capacity of this device makes it suitable for high-power applications such as motor control and power converters.

In summary, the STP60NF06 is a single N-channel FET designed for low on-state resistance and low leakage current. It is used in a variety of power management and conversion applications, as well as in motor controls and switching supplies. Its fast switching speed and high current capacity make it an ideal choice for these applications.

The specific data is subject to PDF, and the above content is for reference

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