
Allicdata Part #: | 497-3197-5-ND |
Manufacturer Part#: |
STP60NF06FP |
Price: | $ 0.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 30A TO220FP |
More Detail: | N-Channel 60V 30A (Tc) 30W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.83000 |
10 +: | $ 0.80510 |
100 +: | $ 0.78850 |
1000 +: | $ 0.77190 |
10000 +: | $ 0.74700 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1810pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 66nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The STP60NF06FP is a part of the N-channel enhancement mode field effect transistor (FET) family manufactured by STMicroelectronics. The FETs are the semiconductor devices used to control current flow by using an electric field. The STP60NF06FP offers low on-state resistance and an improved dV/dt capability, making it suitable for high-current switching applications, general purpose switching and in power management systems.
The STP60NF06FP features a maximum drain source voltage VDSS rating of 60V, a maximum drain current ID of 60A, a low maximum on-state resistance RDS(on) rating of 0.040 ohms, a maximum breakdown voltage BVDSS rating of 60V, and a maximum junction temperature TJ rating of 150°C. All these ratings prove that the STP60NF06FP can handle the power requirements of most power management systems.
The STP60NF06FP has an N-channel FET construction with an internal gate-source voltage VGS threshold of 4.5V. This means that it requires a relatively low VGS rating to turn it off. Once the VGS threshold is met, the FET operates as an active open-drain device, allowing current to flow between the source and the drain terminals. The on-state resistance, commonly referred to as the RDS(on) rating, of the STP60NF06FP is 0.040 ohms which is outperforming other model’s RDS(on) maximum rating. The extremely low on-state resistance allows the STP60NF06FP to dissipate less standby energy, resulting in lower power loss.
The STP60NF06FP can withstand high-speed switching due to its improved dV/dt capability. The enhanced dV/dt capability allows for higher maximum drain-source diode current ratings and a lower reverse transfer capacitance. This allows the STP60NF06FP to have faster switching times and improved system reliability. The FET also has a fast-recovery body diode capable of absorbing high frequencies, reducing switching noise and eradicating high-frequency differences between its source and drain.
The STP60NF06FP can be used in a wide range of applications including automotive and industrial motor control systems, LED lighting, power supplies for domestic appliances, notebook PCs, battery powered systems, and telecom infrastructure equipment. The STP60NF06FP can be used to regulate the power that is being supplied to the system in order to conserve energy and reduce power losses.
In conclusion, the STP60NF06FP offers low on-state resistance, improved dV/dt capability, and a fast-recovery body diode which makes it suitable for many high-power switching applications. The FET can be used in automotive, industrial and battery powered applications, and it can regulate the power supplied to help conserve energy. The FET is available in a TO-220AB package.
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