STP60NF06FP Allicdata Electronics
Allicdata Part #:

497-3197-5-ND

Manufacturer Part#:

STP60NF06FP

Price: $ 0.83
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 30A TO220FP
More Detail: N-Channel 60V 30A (Tc) 30W (Tc) Through Hole TO-22...
DataSheet: STP60NF06FP datasheetSTP60NF06FP Datasheet/PDF
Quantity: 1000
1 +: $ 0.83000
10 +: $ 0.80510
100 +: $ 0.78850
1000 +: $ 0.77190
10000 +: $ 0.74700
Stock 1000Can Ship Immediately
$ 0.83
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP60NF06FP is a part of the N-channel enhancement mode field effect transistor (FET) family manufactured by STMicroelectronics. The FETs are the semiconductor devices used to control current flow by using an electric field. The STP60NF06FP offers low on-state resistance and an improved dV/dt capability, making it suitable for high-current switching applications, general purpose switching and in power management systems.

The STP60NF06FP features a maximum drain source voltage VDSS rating of 60V, a maximum drain current ID of 60A, a low maximum on-state resistance RDS(on) rating of 0.040 ohms, a maximum breakdown voltage BVDSS rating of 60V, and a maximum junction temperature TJ rating of 150°C. All these ratings prove that the STP60NF06FP can handle the power requirements of most power management systems.

The STP60NF06FP has an N-channel FET construction with an internal gate-source voltage VGS threshold of 4.5V. This means that it requires a relatively low VGS rating to turn it off. Once the VGS threshold is met, the FET operates as an active open-drain device, allowing current to flow between the source and the drain terminals. The on-state resistance, commonly referred to as the RDS(on) rating, of the STP60NF06FP is 0.040 ohms which is outperforming other model’s RDS(on) maximum rating. The extremely low on-state resistance allows the STP60NF06FP to dissipate less standby energy, resulting in lower power loss.

The STP60NF06FP can withstand high-speed switching due to its improved dV/dt capability. The enhanced dV/dt capability allows for higher maximum drain-source diode current ratings and a lower reverse transfer capacitance. This allows the STP60NF06FP to have faster switching times and improved system reliability. The FET also has a fast-recovery body diode capable of absorbing high frequencies, reducing switching noise and eradicating high-frequency differences between its source and drain.

The STP60NF06FP can be used in a wide range of applications including automotive and industrial motor control systems, LED lighting, power supplies for domestic appliances, notebook PCs, battery powered systems, and telecom infrastructure equipment. The STP60NF06FP can be used to regulate the power that is being supplied to the system in order to conserve energy and reduce power losses.

In conclusion, the STP60NF06FP offers low on-state resistance, improved dV/dt capability, and a fast-recovery body diode which makes it suitable for many high-power switching applications. The FET can be used in automotive, industrial and battery powered applications, and it can regulate the power supplied to help conserve energy. The FET is available in a TO-220AB package.

The specific data is subject to PDF, and the above content is for reference

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