STP60NH2LL Allicdata Electronics
Allicdata Part #:

STP60NH2LL-ND

Manufacturer Part#:

STP60NH2LL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 24V 40A TO-220
More Detail: N-Channel 24V 40A (Tc) 60W (Tc) Through Hole TO-22...
DataSheet: STP60NH2LL datasheetSTP60NH2LL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Vgs (Max): ±18V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 24V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STP60NH2LL is a 60-volt N-channel logic level enhancement mode MOSFET (metal oxide semiconductor field-effect transistor) that uses a new process technology to achieve low on-resistance. It is specifically designed for switching and linear applications such as DC-DC converters, LCD backlight drivers and motor drives.

In applications where a low on-resistance device is needed, the STP60NH2LL is an ideal choice. The MOSFET offers an industry-leading on-resistance of 90mOhms, allowing it to achieve high efficiency as compared to other MOSFETs. Furthermore, its logic level enhancement modegate drive allows it to be used with a wide range of gate drive voltages.

The STP60NH2LL\'s logic level enhancement mode works by applying a voltage difference across the gate and source electrode. This voltage difference will cause the current to flow from the source to drain electrode which in turn will trigger the MOSFET to be in "on" state. This can be used to control the power flow from source to drain. The voltage is regulated by the gate drive voltage. The higher the gate drive voltage, the lower the power consumption.

The STP60NH2LL is capable of withstanding an avalanche voltage by providing overvoltage protection. This is important in applications where the power supply or load is prone to high voltage. Additionally, the device is able to withstand reverse load currents with its integrated anti-parallel diode.

In terms of its physical layout, the STP60NH2LL is a 3-terminal device that can be mounted either horizontally or vertically. Its low RDS-on make it suitable for use in applications where limited space is available. Furthermore, its dual-side thermal pad design minimizes the thermal resistance between the device’s case and the board.

The STP60NH2LL is a great choice for a variety of applications such as DC-DC converters, motor drivers, and LCD backlight drivers due to its low on-resistance as well as its logic level enhancement mode. Its integrated overvoltage protection and anti-parallel diode make it a robust solution for demanding environments. Additionally, its dual-side thermal pad minimizes the thermal resistance, allowing it to achieve high efficiency.

The specific data is subject to PDF, and the above content is for reference

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