STP62NS04Z

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1330pF @ 25V
Vgs (Max):	Clamped
Gate Charge (Qg) (Max) @ Vgs:	47nC @ 10V
Series:	MESH OVERLAY™
Rds On (Max) @ Id, Vgs:	15 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	62A (Tc)
Drain to Source Voltage (Vdss):	33V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP62NS04Z MOSFET is a high voltage N-Channel MOSFET that is widely used in a variety of applications. Its high breakdown voltage and low coupling capacitance make it an excellent choice for a variety of switched-mode power supplies and high voltage switching circuits. In this article, we will discuss the application field and working principle of the STP62NS04Z.

Application Field

The STP62NS04Z is a high voltage N-Channel MOSFET suitable for use in a variety of high voltage and current applications. It is primarily used in switched-mode power supplies and high voltage switching circuits and has very low gate-to-source capacitance which makes it well-suited for high speed switching operations. The device also has low on-state resistance which makes it ideal for powering high frequency circuits.Another common application of the STP62NS04Z is in light dimming control. As a light dimming control, the device can be used to control the output current of an LED array. The low resistance of the device reduces power consumption and improves efficiency when dimming an LED array.

Working Principle

The STP62NS04Z uses the principle of metal-oxide-semiconductor field-effect-transistor (MOSFET) technology to control current. It is a three-terminal device consisting of a gate electrode, source electrode, and drain electrode. When a voltage is applied to the gate electrode, the gate creates an electric field that controls the current flowing between the source and drain, which is known as the channel region.The operation of the STP62NS04Z MOSFET is based on the principles of the PN junction diode. In the absence of a gate voltage, there is a large reverse leakage current between the source and drain. As the gate voltage is increased, a depletion region is formed, which reduces the reverse leakage current and increases the gate-source capacitance, allowing more gate control of the source-drain current. By increasing or decreasing the gate voltage, the source-drain current can be adjusted and switched off completely.

Conclusion

The STP62NS04Z is a high voltage N-Channel MOSFET suitable for a variety of applications where high voltage and current are required. It is primarily used in switched-mode power supplies and high voltage switching circuits and has very low gate-to-source capacitance which makes it well-suited for high speed switching operations. In addition, it is also used in light dimming controls, where its low resistance reduces power consumption and improves efficiency. The working principle of the device is based on the principles of the PN junction diode and is controlled by the gate voltage, which can adjust and switch the source-drain current.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description