STP6N65M2

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	60W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	226pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	9.8nC @ 10V
Series:	MDmesh™
Rds On (Max) @ Id, Vgs:	1.35 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The STP6N65M2 is a Field Effect Transistor (FET) made by ST Microelectronics. It is a single n-channel device. FETs are fundamental building blocks of today’s modern day semiconductor devices and electronics. They are largely seen as switches or amplifiers that can control and boost low power signals. This is why they are used in a variety of applications, including power management, audio, video, and communications. The STP6N65M2 is a vertical DMOS (Double- Diffused Metal-Oxide-Semiconductor) N-channel enhancement-mode device with an integrated Schottky diode. It is a voltage-controlled field effect transistor designed for low voltage, high frequency switching applications, such as in wireless telecommunication systems. The device utilizes a vertical DMOS structure and provides a drain current capability up to 650mA, with a peak drain voltage of 20V. This is a significant increase from other FETs on the market with similar drain current ratings. The STP6N65M2 is a perfect solution for applications that require a robust design. It is able to withstand higher voltages, has a low threshold voltage, and a low on-resistance. This makes the STP6N65M2 useful in areas where power is needed to be regulated with high accuracy and efficiency. The device has a high-frequency switching capability, making it ideal for RF applications, mobile phones, and wireless systems. The working principle of the STP6N65M2 is simple yet powerful. It consists of a source, a gate and a drain connected to a semiconductor material. The gate is charged, or discharged, to one of two states, “on”, or “off”, depending on the voltage applied to the gate. When the gate is charged to a certain voltage (Vgs) the device will be “on”, providing a low resistance between the source and the drain. When it is discharged the device will be “off”, with a high resistance between the source and the drain. This high resistance prevents current from flowing through the device. The STP6N65M2 is a versatile device with a variety of uses and applications. Its small size and high-frequency switching capability make it an ideal choice for RF applications such as mobile phones and wireless systems. It is also useful in power management systems, audio and video equipment, and communications. In addition, its robust design and low on- resistance makes it a perfect solution for areas where power must be regulated with high accuracy and efficiency. Overall, the STP6N65M2 is a great device for a variety of applications. It is compact and energy efficient, providing reliable and consistent results that customers can rely on. With its small size and robust design, it is an excellent choice for nearly any application.

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