| Allicdata Part #: | 497-3198-5-ND |
| Manufacturer Part#: |
STP6NK60Z |
| Price: | $ 0.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 6A TO-220 |
| More Detail: | N-Channel 600V 6A (Tc) 110W (Tc) Through Hole TO-2... |
| DataSheet: |  STP6NK60Z Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.67000 |
| 10 +: | $ 0.64990 |
| 100 +: | $ 0.63650 |
| 1000 +: | $ 0.62310 |
| 10000 +: | $ 0.60300 |
| Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 905pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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The STP6NK60Z is a high voltage, high current, N-channel power MOSFET which is used in a variety of applications. This three-terminal device is widely used in industrial, consumer, communication and automotive applications.
In industrial applications, the STP6NK60Z can be used in motor control, HVAC, solar, audio and power transmission. In consumer applications, the STP6NK60Z is widely used in home appliances, home automation and entertainment. In communication applications, the device can be used in broadband communications and switching regulators. And in automotive applications, the STP6NK60Z can be found in power train, ignition, EPS and lighting control.
The STP6NK60Z is a MOSFET that has an insulated gate, which is made of polycrystalline silicon. The insulated gate is connected to three terminals which are the source, drain and gate. The gate voltage is applied to the insulated gate, changing its conductivity and creating a channel between the source and drain. This channel can be controlled by a current applied to the gate, and is used to regulate the flow of current between the source and drain.
The STP6NK60Z has a low on-resistance and a high voltage-capable structure, which makes it well-suited for use in high voltage and high power applications. The device can handle up to 600V and 6A of current, and the on-resistance is very low (60mΩ). The operating temperature range of the STP6NK60Z is from -55℃ to 175℃.
The STP6NK60Z also has a series of protection features to enable safe operation under various environmental conditions. These features include over-temperature protection, over-current protection and electrostatic discharge protection.
In summary, the STP6NK60Z MOSFET is a high voltage and high current device, which can be used in a variety of applications. The device has a low on-resistance, a high voltage-capable structure and a wide operating temperature range. In addition, the device has a number of protection features to enable safe operation under various conditions.
The specific data is subject to PDF, and the above content is for reference
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