
Allicdata Part #: | 497-3199-5-ND |
Manufacturer Part#: |
STP6NK90Z |
Price: | $ 2.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 900V 5.8A TO-220 |
More Detail: | N-Channel 900V 5.8A (Tc) 140W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 900 |
1 +: | $ 2.30000 |
10 +: | $ 2.23100 |
100 +: | $ 2.18500 |
1000 +: | $ 2.13900 |
10000 +: | $ 2.07000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 60.5nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP6NK90Z is a state-of-the-art N-channel MOSFET (metal-oxide semiconductor field-effect transistor) that is a great choice for extremely low on-resistance switching applications. It\'s also known as a “super-junction MOSFET” due to its unique internal structure. The STP6NK90Z has extremely low gate charge, and is capable of handling high frequencies and very high currents, making it a great choice for Class D audio and server applications.
The STP6NK90Z is mainly used in applications such as switching power converters, low loss switch mode power supplies, voltage regulators, solar inverters, motor control, and motor drives. The STP6NK90Z also has application in high-frequency DC/DC converters, high-switching frequency architectures, and synchronous rectification, along with other consumer applications such as class-D audio systems and wireless charging.
The STP6NK90Z is a depletion-mode MOSFET, meaning that its switching characteristics are generally better than enhancement-mode MOSFETs. This makes it an ideal choice for switching applications. The STP6NK90Z is an N-channel device with a P-channel counterpart called the STP6PK90Z.
The STP6NK90Z is a voltage-controlled MOSFET, meaning that it is controlled by the applied gate-to-source voltage. When the gate-to-source voltage is high, the MOSFET is “on”, meaning current is flowing through the drain-to-source channel. When the gate-to-source voltage is low, the MOSFET is “off”, preventing current from flowing through the drain-to-source channel. The “on” resistance of the STP6NK90Z is extremely low, which allows for very efficient switching and very low loss switch mode power supplies.
The STP6NK90Z has a maximum drain-to-source voltage of 650V and a maximum drain current of 38A. The maximum power dissipation of the STP6NK90Z is 290W. This is more than enough to handle most consumer applications, and is ideal for high-frequency switching applications. The STP6NK90Z also features temperature protection, current limiting, and over-voltage protection, which protect the device in the event of a failure.
The STP6NK90Z is an ideal choice for a wide variety of applications. Its low on-resistance, combined with its high current capabilities, make it a great choice for high-frequency switching applications and synchronous rectification. Its temperature protection, current limiting, and over-voltage protection make it an ideal choice for consumer applications. The STP6NK90Z is an excellent choice for anyone looking for a reliable and efficient MOSFET.
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