STS8C5H30L Allicdata Electronics

STS8C5H30L Discrete Semiconductor Products

Allicdata Part #:

497-4398-2-ND

Manufacturer Part#:

STS8C5H30L

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC
More Detail: Mosfet Array N and P-Channel 30V 8A, 5.4A 2W Surfa...
DataSheet: STS8C5H30L datasheetSTS8C5H30L Datasheet/PDF
Quantity: 1000
1 +: $ 0.54000
10 +: $ 0.52380
100 +: $ 0.51300
1000 +: $ 0.50220
10000 +: $ 0.48600
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: ST*8C5H
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Series: STripFET™ III
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STS8C5H30L is a type of power array MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by ST Microelectronics, and it is commonly used in the power management and control applications. Power arrays are a type of integrated circuit (IC) that contain multiple MOSFETs on a single chip and offer enhanced performance, ease of use, and cost effectiveness. STS8C5H30L is specifically designed for ac-dc converters and applications where power consumption needs to be regulated.

The STS8C5H30L is a high speed NP (negative polarity) power array MOSFET that operates at a peak drain current of 8A and has a maximum RDS(on) of 0.3 ohms. It features a common source configuration with an integrated diode and a high-speed N-channel MOSFET. The integrated diode, while allowing high-efficiency operation, also provides a space and cost saving solution. The MOSFET provides high switching speed and improved energy efficiency.

The device is suitable for use in the power management applications such as notebook computer supplies, portable DVD players, and automotive control systems. It can also be used for the power regulation in power inverters and computer power supplies. The IC is capable of handling high voltage and high current applications and has an operating temperature range of -55 to +150 degrees Celsius. The device is packaged in a small surface mount package, making it suitable for use in high density applications.

The main working principle of the STS8C5H30L is based on FET (field-effect transistor) technology. FETs are commonly used in digital logic circuits and come in three main forms: an N-channel MOSFET, a P-channel MOSFET, and a depletion-mode MOSFET. The device uses an N-channel MOSFET that consists of a gate and two terminals; a source terminal, and a drain terminal. The voltage applied on the gate controls the current that passes from the source to the drain, creating the desired power output.

The STS8C5H30L is an important device for power management and control applications. It provides enhanced performance, ease of use, and a cost-effective solution to power regulation in ac-dc converters and other applications. Its ability to handle both high voltage and high current applications also makes it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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