STS8N6LF6AG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1340pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Series:	Automotive, AEC-Q101, STripFET™ F6
Rds On (Max) @ Id, Vgs:	24 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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STS8N6LF6AG is a dual N-channel field effect transistor (FET) used in high power switching applications. It is composed of two independent N-channel FETs with a single gate.The STS8N6LF6AG FET is suitable for various topologies, including low side and high side operation, bootstrap and floating topologies, charge boost applications, and power management. It is also compatible with various control circuits, including pulse width modulation (PWM) and analog control circuits.The STS8N6LF6AG FET is designed to minimize switching losses and minimize the operating temperature of the device. It provides high switching speed, low gate charge and low gate-source capacitance.The STS8N6LF6AG FET is widely used in industrial, automotive, computer peripherals, and consumer electronics applications for power management. It can be used in switching power supplies, AC/DC converters, DC/DC converters, DC-DC converters, motor control systems, and various other industrial control circuits.The STS8N6LF6AG FET operates in the single-device or dual-device configuration. In the single-device configuration, the gate is connected to one source and the drain is connected to the other source. In the dual-device configuration, the gate can be connected to either one source or both sources.The STS8N6LF6AG FET features a low on-state resistance and high off-state resistance, allowing it to efficiently control the current flowing through the device. The gate-source capacitance is also very low, which allows for high switching speed and low power consumption.The STS8N6LF6AG FET is capable of handling up to 200V and up to 5 amperes of continuous drain current. It can also handle up to 12A of peak current for a duration of 10us. The device also has an isolation voltage of 1500V and a maximum blocking voltage of 200V.The STS8N6LF6AG FET is designed with a number of safety and reliability features, including built-in ESD protection, robust dielectric isolation, and device-level and PCB-level EMI measures. It also has temperature-dependent characteristics, which help ensure reliable operation at high temperatures.The STS8N6LF6AG FET is also compatible with various control circuits, including pulse width modulation (PWM) and analog control circuits. It can be controlled by a PWM or by a compatible gate driver IC, such as the TLP212A or TLP212B, which provide pulse width modulation (PWM) control.The STS8N6LF6AG FET is also designed with a built-in temperature protection. It is designed to cut off the device if the temperature exceeds its rated maximum junction temperature. By utilizing this feature, it helps protect the device from potential damage due to overheating.To summarize, the STS8N6LF6AG FET is a dual N-channel FET used in high power switching applications. It is designed with a low on-state resistance and high off-state resistance, allowing it to efficiently control the current flowing through the device. It is also designed with safety and reliability features, including built-in ESD protection, robust dielectric isolation, and device-level and PCB-level EMI measures. It is also compatible with various control circuits, including pulse width modulation (PWM) and analog control circuits. The STS8N6LF6AG FET is suitable for various topologies, including low side and high side operation, bootstrap and floating topologies, charge boost applications, and power management.

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