STS8DNH3LL Allicdata Electronics

STS8DNH3LL Discrete Semiconductor Products

Allicdata Part #:

497-4399-2-ND

Manufacturer Part#:

STS8DNH3LL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET 2N-CH 30V 8A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 8A 2W Surface ...
DataSheet: STS8DNH3LL datasheetSTS8DNH3LL Datasheet/PDF
Quantity: 314
Stock 314Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: ST*8DNH
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Series: STripFET™ III
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STS8DNH3LL application field and working principle is a transistor-based device that is often referred to as a MOSFET array. This technology is used in applications where it is desired to have multiple transistors working in parallel. The MOSFET array eliminates the need for multiple transistors connected together, thus saving cost and space in the form of a single package. The STS8DNH3LL is an 8-pin device that can be used for a variety of purposes, such as providing multiplexed signal input/output, signal routing, voltage level shifting, or switching power.

The STS8DNH3LL, like all transistors, is based on the field-effect transistor (FET). The FET is a three-terminal device that relies on the electric field between source and drain to control the current flow through the channel. This is known as a voltage-controlled device, as the voltage between source and drain determines the resistance of the channel and, therefore, the current flow. FETs are available in two main types: depletion-mode and enhancement-mode. A depletion-mode FET has an inherent off-state and will only conduct when a voltage is applied, while an enhancement-mode FET has an inherent on-state and requires a voltage to be applied to turn it off.

The STS8DNH3LL is an array of eight (8) FETs and is designed to operate in depletion-mode. A common source and common gate are used to connect the FETs in parallel and allow control of the current flow through each FET. The gate voltage is the controlling factor; when the voltage is applied, the current will flow through the FETs. The STS8DNH3LL also includes an integrated gate pulser, which is used to create a pulse of voltage at the gates in order to switch the current off. This is useful when precision control of current flow is required, as when implementing a multiplexer.

The STS8DNH3LL is a versatile device and can be used in a variety of applications. As a multiplexer, it can be used to route signals from multiple sources to a single destination, or from a single source to multiple destinations. When used for voltage level shifting, it can be used to shift either digital or analog signals from one voltage level to another. Finally, as a switch-mode power supply, it can be used to regulate current and/or voltage in power converters.

In summary, the STS8DNH3LL application field and working principle is an 8-pin MOSFET array designed to operate in depletion-mode and provide control of current flow. It can be used in a variety of applications, such as multiplexers, voltage level shifters, and switch-mode power supplies. The STS8DNH3LL is a cost-effective, space-saving solution for applications where multiple transistors are needed.

The specific data is subject to PDF, and the above content is for reference

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