SZBZX84B16LT1G, manufactured by Diodes Incorporated, is a silicon epitaxial planar Zener diode, designed for use in surface mounting applications. This device has excellent temperature stability and can perform in a wide range of tasks due to its wide operating temperature range - 30 to +150°C.

This diode is capable of withstanding very high reverse voltage up to 43V, which makes it suitable for use in many different applications.

Application Field

SZBZX84B16LT1G is widely used in TV and display circuit, battery operated equipment, power supplies, overload protection circuit, etc. It is also used in switching power supplies and transformer applications, as well as in the protection of integrated circuits, such as memory. Furthermore, it is applied in automotive electronic systems, clock circuit, regulator circuits, and many other applications.

Working Principle

The semiconductor material of the SZBZX84B16LT1G is made of P-type epitaxial silicon, which is forged together with N-type silicon, forming a rectifying junction on their interlayer. This junction emits many electrons and holes that continually flow to form electric current passing through the diode.

The current passing through the diode creates a small reverse electric field, and this field modulates both the resistance and the voltage of the diode. When the electric field reaches a certain level, the PN junction behaves as a Zener diode, thus forming an avalanche breakdown.

In normal operation, the Zener resistance of this diode is usually higher than that of a normal diode, so the current flowing through it is smaller. This is what makes it suitable for use in thermal and overload protection applications, as the current passing through it is smaller and thus reduces the risk of overheating.

SZBZX84B16LT1G is also capable of withstanding very high temperature and voltage conditions, which makes it an ideal choice for applications that require high reliability.