SZBZX84C43LT1G Allicdata Electronics
Allicdata Part #:

SZBZX84C43LT1G-ND

Manufacturer Part#:

SZBZX84C43LT1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 43V 225MW SOT23-3
More Detail: Zener Diode 43V 225mW ±7% Surface Mount SOT-23-3 (...
DataSheet: SZBZX84C43LT1G datasheetSZBZX84C43LT1G Datasheet/PDF
Quantity: 1000
15000 +: $ 0.01376
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 43V
Tolerance: ±7%
Power - Max: 225mW
Impedance (Max) (Zzt): 150 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 30.1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: BZX84C43
Description

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Diodes and transistors are two of the most important components in modern circuit design. The SZBZX84C43LT1G is a single zener diode, which is an important type of diode utilized for circuit protection, among other applications. This article will present information about the application field and working principle of the SZBZX84C43LT1G.

The SZBZX84C43LT1G is a high-voltage, high-reliability, low-leakage, Bidirectional Zener Diode. It is designed to meet the requirements of a wide range of applications, including protection of sensitive components from overvoltage, power management, reverse current protection, and voltage regulation. This diode has a voltage rating of 5.6V and a current rating of 200mA.

The application field of the SZBZX84C43LT1G extends to several different areas. In addition to the applications mentioned previously, the diode is also suitable for linear or DC conduction, static coupling, and wave-shaping circuits. It is also frequently used as a protection device to limit the flow of current from a source to a load, preventing damage from overcurrent.

The working principle of the SZBZX84C43LT1G is based on the behavior of a p-n junction. When voltage across this junction reaches a certain value, known as the breakdown voltage, electrons begin to flow, forming a “zener diode”. The breakdown voltage of this particular diode is 5.6V, so when the applied voltage reaches or exceeds this value, a reverse current is generated. This current prevents any further rise in the voltage and limits the amount of current flowing through the circuit.

The SZBZX84C43LT1G is ideal for use in power supply design, as its higher breakdown voltage and higher temperature coefficient can reduce the amount of energy dissipated, ultimately resulting in increased energy efficiency. It can also be used for high-frequency switching applications, as its lower capacitance can reduce switching noise and its high reverse breakdown rating can provide enhanced protection against overvoltage.

The SZBZX84C43LT1G can be easily integrated into many different types of circuits thanks to its high power rating and its small size. It is also resistant to temperature extremes and can usually withstand temperatures up to 175°C. Furthermore, it has a low leakage current, making it suitable for low-power applications such as logic circuits.

The SZBZX84C43LT1G is a versatile and reliable single zener diode that can be used in a variety of applications, including protection from overvoltage, power management, reverse current protection, and voltage regulation. It is ideal for use in power supplies and high-frequency switching applications due to its high breakdown voltage and low capacitance, which can reduce energy consumption and switching noise, respectively. The diode also offers excellent temperature stability, a low leakage current, and a small size, making it suitable for a wide range of circuits.

The specific data is subject to PDF, and the above content is for reference

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