SZBZX84C27ET1G

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The SZBZX84C27ET1G diode is a Zener diode that is designed to rapidly protect sensitive components from voltage surges. It is capable of providing circuit protection with maximum power dissipation of 1 watt and voltage breakdown of 35 V (VDZ); it is also available in several different operating reverse voltages.

Application Fields

SZBZX84C27ET1G is particularly suitable for protection of electronic equipment from overvoltage transients with oscilloscope time domain such as lightning, switching inductive loads, short circuits and electrostatic discharge. It can also be used to protect power supplies, transistors and transistors from overvoltages; this is due to its fast response time of 1mS or less. Additional application fields include battery-driven low voltage applications such as LED lighting, renewable energy storage, photovoltaic systems,, automotive electronics and telecom equipment.

Working Principle

The principle of operation is diode conduction. When a potential that is exceeding the diode’s breakdown voltage is applied across it, the zener diode becomes forward biased and current begins to flow. This flow of current is usually in the order of microamperes at a given voltage; this small current flow causes the zener diode to breakdown and the current begins to increases exponentially.

The breakdown voltage of a Zener diode is determined by the value of reverse bias applied. The SZBZX84C27ET1G diode has a breakdown voltage of 35 V (VDZ) and is therefore particularly suitable for applications with high surge voltages and currents. Additionally, it has a very low forward voltage drop of 0.5 V and a very fast response time of 1mS or less. This ensures that the critical components are quickly and effectively protected.

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