SZBZX84C30ET1G

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Diodes - Zener - Single

SZBZX84C30ET1G devices are highly used in the fields of electric equipment and electronic engineering. By providing protection and providing circuit stability of high power sources, these devices are ideal in combination with an auxiliary voltage source. These devices consist of a PN junction diode connected in reverse biased voltage in a region of high conduction, and thus emitting a constant reverse bias current. Working principles of SZBZX84C30ET1G devices are based on the effect of a photon released when electrons and holes come across the depletion region of a PN junction. When in reverse biased manner, the PN junction behaves very differently from what it normally does. When a voltage level above the junction’s PN junction voltage is applied, the number of current carriers that cross the junction drops, resulting in current flow exclusively through the junction, referred to as reverse breakdown. When the PN junction is in this reverse breakdown region, its characteristics become reverse of what it was otherwise, i.e. current through the junction increases exponentially with an increase in reverse bias voltage applied. This prevents an electronic system from over-voltage condition and acts as an inherent protection. The increase in current is resisted by the circuit, resulting in a voltage viewed across the junction. This effect is called Zener breakdown and the PN junction is referred to as a Zener diode.

SZBZX84C30ET1G devices are one of the most favoured applications for Zener diodes, owing to their stability and large breakdown voltage range available. They provide reliable solution for several DC applications like in battery-operated devices, motor-operating circuits, computers, electronic test equipment, etc. In addition, these devices are also used to construct an adjustable voltage regulator and act as principle component in designing an over-voltage protector circuit.

These devices are an array of two terminals and an anode-cathode junction. While providing reliable voltage regulation, SZBZX84C30ET1G devices also generate low noise and consume very low power. They can withstand high frequency AC and DC current. Their small size, low power requirements, and light weight make them ideal for use in portable and stationary electronic systems.

Technical specifications for SZBZX84C30ET1G devices indicate a breakdown voltage range of 30 to 84 volts, respectively. Maximum power dissipation is 1/2 Watts junction to ambient, and a maximum operating temperature up to 125°C. Maximum leakage current is 0.06µA at 85°C and 0.4µA at 125°C. Junction capacitance is 600pF.

In summary, SZBZX84C30ET1G devices are ideal for providing adjustable voltage regulation, over-voltage protection, current regulation and should be a prime consideration in any design requiring reverse breakdown of a PN junction. Being small and light weight, they also provide easy integration and excellent tolerance of operating temperature.

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