TC4468MJD

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The TC4468MJD is a high-efficiency MOSFET/IGBT gate driver designed to drive a wide range of N-channel MOSFET/IGBTs on various applications. It is available in surface mount DIP-8 packages and can operate from -40°C to +125°C. TC4468MJD belongs to PMIC or power management integrated circuit field and Gate driver sub-category.

The Voltage Headroom Control (VHC) technology used in the TC4468MJD makes it fully independent of the gate threshold voltage of the MOSFET/IGBT. This allows it to drive various N-channel MOSFETs/IGBTs with different gate threshold voltage, while providing a constant level of performance. By monitoring the current consumed, it can adapt its output voltage to the precise gate drive voltage required. These features prevent the over-driving of MOSFETs/IGBTs, resulting in better overall system efficiency.

TC4468MJD features advanced protection features like active current limiting, thermal shutdown and under-voltage lockout. The active current limiting feature will shut down the output if the current reaches a preset level, preventing damage to the MOSFET/IGBT. The thermal shutdown will stop the device from operating once it reaches a preset temperature. The under-voltage lockout will prevent the device from operating if the voltage is too low.

The TC4468MJD can be used to drive MOSFETs/IGBTs in a wide range of applications such as industrial motor control, appliance motor control, Solar micro inverters, motor drive, automotive power systems, and more.

In terms of its ultimate working, the internal NPN charge pump provides a greater than 10V gate drive voltage up to 1.1A load current. This high output voltage ensures that it can drive the MOSFET/IGBT over its entire SOA (Safe Operating Area). During load transient conditions, the device is able to monitor the gate drive current and adjust its output voltage dynamically.

In summary, TC4468MJD can be used to drive various N-channel MOSFETs/IGBTs with superior performance. Its advanced protection features and voltage headroom control technology makes driving MOSFETs/IGBTs easier and more efficient, resulting in improved system performance.

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