TC4469EPD

Logic Voltage - VIL, VIH:	0.8V, 2.4V
Base Part Number:	TC4469
Supplier Device Package:	14-PDIP
Package / Case:	14-DIP (0.300", 7.62mm)
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	15ns, 15ns
Input Type:	Inverting, Non-Inverting
Current - Peak Output (Source, Sink):	1.2A, 1.2A
Series:	--
Voltage - Supply:	4.5 V ~ 18 V
Gate Type:	N-Channel, P-Channel MOSFET
Number of Drivers:	4
Channel Type:	Independent
Driven Configuration:	Low-Side
Part Status:	Active
Packaging:	Tube

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TC4469EPD is a monolithic high-speed MOSFET/IGBT gate driver IC with on-chip power MOSFETs. It is part of the expanding portfolio of TOSHIBA Semiconductor’s Hi-Reliability MOSFET and IGBT drivers.TC4469EPD provides the necessary high current and voltage thresholds to drive almost any low capacitance MOSFET and IGBT. It offers excellent output current capability and fast switching speeds, while providing a wide range of electric and thermal protection features, enabling reliable operation in severe applications.This driver IC is designed for maximum flexibility, allowing customers to configure their driver to best match their application requirements. This includes a wide output voltage range, a configurable internal charge pump, protection features, and adjustable high-speed turn-off switching speeds.ApplicationsThe TC4469EPD is ideal for applications that require a fast, high-quality gate driver, such as:* Automotive and industrial motor drives, , servo systems* Solar power inverters * Switching power supplies * Electronic lighting * Uninterruptible power suppliesWorking PrincipleThe TC4469EPD is a monolithic high-speed MOSFET/IGBT gate driver with on-chip power MOSFETs. It features a power MOSFET single-stage driver and a monolithic linear bias regulator to maintain a constant gate drive voltage regardless of VCC variations.The driver includes two high-current outputs for driving either two power MOSFETS with source/drain channels in parallel (half-bridge) or one N-channel power MOSFET with its source channel (single-ended). The output current of each channel can reach up to ±3A peak and the output voltage can be set to any voltage between 0 to 15V.The driver also features several protection circuits, such as current stays off circuit, temperature protection, ESD protection, over-voltage protection, over-current shutdown and short-circuit protection. These protect the device and its connected components from damage due to improper usage conditions.ConclusionIn conclusion, TC4469EPD is a high-performance, monolithic MOSFET/IGBT gate driver IC with on-chip power MOSFETs. It offers excellent output current, high frequency switching speed, and multiple protection features for reliable system operation. The device is ideal for motor drive and power conversion applications that require a fast and high-quality gate driver.

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