Allicdata Part #: | TF410-TL-H-ND |
Manufacturer Part#: |
TF410-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 1MA 30MW USFP |
More Detail: | JFET N-Channel 1mA 30mW Surface Mount 3-USFP |
DataSheet: | TF410-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 50µA @ 10V |
Current Drain (Id) - Max: | 1mA |
Input Capacitance (Ciss) (Max) @ Vds: | 0.7pF @ 10V |
Power - Max: | 30mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | 3-USFP |
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A JFET or Junction Field-effect Transistor is a semiconductor electronic device used for amplification or switching purposes in electronic circuits. The TF410-TL-H is a type of JFET which can be used in various electronic applications. The characteristics of this particular device make it highly suitable for switching, modulation, and amplification. This article will explore the application field and working principle of the TF410-TL-H.
Overview
The TF410-TL-H is a N-channel JFET, which means it has an N-type channel through its semiconductor body. It has a maximum drain-source breakdown voltage of 28V, a maximum drain current of 0.6A, and a gate-source voltage of -55V. It is designed as a lateral type device, meaning the gate, drain and source are horizontally arranged in the same line. It has a gate-source capacitance of 21pF and a gate resistance of 75Ω. These features make the device highly suitable for switching, amplification, and modulation applications.
Application Field and Working Principle
JFETs are used for a variety of applications such as switching, modulation, and amplification. The TF410-TL-H is particularly suitable for switching applications due to its high drain-source breakdown voltage and low gate-source voltage. Its lateral design also makes it suitable for high-frequency switching applications. The device works by allowing only a certain amount of current to flow between the drain and the source. This current is controlled by the voltage applied to the gate electrode. As the voltage applied to the gate increases, the current flowing between the drain and the source increases; when the voltage decreases, the current decreases. This makes the TF410-TL-H an ideal device for controlling signals in switching applications.
The TF410-TL-H is also suitable for modulation and amplification applications. By controlling the amount of current flowing between the drain and the source, the device can be used to amplify or modulate a signal. With its low gate-source voltage and high gate resistance, the device can be used to accurately adjust the amount of current flowing, allowing for precise control and modulation of signals.
The TF410-TL-H is an incredibly versatile and reliable device suitable for a variety of applications. With its high drain-source breakdown, low gate-source voltages, and lateral design, it can be used for switching, modulation, and amplification applications. Its precise control of current and low power consumption also make it a highly reliable choice for projects and applications where accuracy and low energy consumption are important.
The specific data is subject to PDF, and the above content is for reference
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