TF412ST5G Allicdata Electronics

TF412ST5G Discrete Semiconductor Products

Allicdata Part #:

TF412ST5GOSTR-ND

Manufacturer Part#:

TF412ST5G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 0.1W SOT-883 XDFN3
More Detail: JFET N-Channel 30V 10mA 100mW Surface Mount SOT-88...
DataSheet: TF412ST5G datasheetTF412ST5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.07144
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Description

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Transistors are a fundamental building block in virtually every form of electronics device today. From small timing circuits to high-end computing systems, transistors work together to provide electrical energy or signal processing capabilities by amplifying, switching, or modulating an input signal. Among the various types of transistors available, junction field-effect transistors (JFETs) are particularly important components in many electronic circuits. And out of the various types of JFETs available, the TF412ST5G transistor is one of the most useful.

TF412ST5G Application Fields

The TF412ST5G is a double-gate, N-channel JFET with small signal amplifying capabilities and low noise. As such, it is used in a wide range of applications, including instrumentation amplifiers, audio preamplifiers, RF amplifiers, wireless device receivers, low frequency amplifiers, data converters such as analog-to-digital converters, active filters, and other low frequency applications. It can also be used in consumer electronics devices such as TVs, DVD players, MP3 players, and home theater systems. In addition, the TF412ST5G has been successfully used in industrial applications, such as motor control and industrial process control.

TF412ST5G Working Principle

The TF412ST5G relies on the field-effect principle to operate. This type of transistor uses an electric field to facilitate the movement of electrons between the source and the drain terminals. The action is controlled by the gate voltage, which, when applied, forms an electric field between the drain and the source, allowing the flow of electrons. This creates a dip in the depletion layer and allows current to flow. When the drain voltage is increased, the depletion layer is widened and this leads to an increase in resistance, thus reducing the current flow.

The gate of the TF412ST5G is also double-gated, meaning it consists of two gate terminals (anode and cathode). The anode gate is used to control the current flow between the source and the drain and is responsible for the amplification of the transistor. The cathode gate can be used to modify the process further by increasing the resistance, or by adjusting the cut-off frequency of the device. The combined effect of the two gates creates a very efficient, low-noise, small-signal amplifying transistor.

Conclusion

The TF412ST5G is an essential component in many electronic circuits and its wide application field and working principle make it a must-have for many industrial, consumer and system designers. Its dual-gate feature allows users to fine-tune the operation to precisely match the application needs, with small signal amplification, low noise, and adjustable cut-off frequencies.

The specific data is subject to PDF, and the above content is for reference

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