TF410-TL-HX Allicdata Electronics
Allicdata Part #:

TF410-TL-HX-ND

Manufacturer Part#:

TF410-TL-HX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 1MA 30MW USFP
More Detail: JFET
DataSheet: TF410-TL-HX datasheetTF410-TL-HX Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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The TF410-TL-HX is a type of field effect transistor (FET). FETs are a type of semiconductor device that is controlled by voltage (or currents) applied to their gate, source, and drain terminal. They are used in a wide variety of applications, such as signal amplification and switching. The TF410-TL-HX is a Junction Field Effect Transistor (JFET), which is a type of FET where the conducting channel connecting the drain to the source is made of lightly doped n-type or p-type semiconductor material. JFETs are usually formed by connecting two individual materials with a dielectric layer in-between.

The TF410-TL-HX is a n-channel JFET designed for radio frequency (RF) applications, such as signal amplification, modulation, demodulation, and switching. It is a very low noise device and offers excellent dynamic range, making it well-suited for high-precision applications such as data transmission and audio processing. It is capable of operating at frequencies up to 1GHz, making it suitable for ultra-high-frequency data transmission.

The TF410-TL-HX has three terminals - gate, source, and drain -, each of which has a specific function. The gate is the control terminal, and the voltage or current applied to it controls the operation of the device. The source is the input terminal, and the voltage or current applied to it determines the type of signal that is passed through the device. The drain is the output terminal, and the voltage or current that is taken from it is what determines the output signal. The amount of current (or voltage) that flows from the source to the drain is determined by the applied gate voltage.

The working principle of JFETs is based upon a phenomenon called High-Impedance Effect, or HI Effect. This phenomenon occurs when a reverse bias is applied between the gate and the source. The reverse bias causes a depletion region to form around the gate, which in turn increases the resistance between the gate and the source (making it much higher than that between the drain and the source). This means that current cannot flow between the gate and the source until a certain voltage is applied to the gate, exceeding the reverse bias voltage. This means that JFETS can be used as current-controlled series switches.

Overall, the TF410-TL-HX is a high-frequency, low-noise JFET designed for RF applications such as signal processing and data transmission. It has three terminals - gate, source, and drain -, each of which has a specific function for controlling the flow of current or voltage. The device functions by using the High-Impedance Effect, or HI Effect, allowing it to be used as a current-controlled series switch.

The specific data is subject to PDF, and the above content is for reference

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