TF414T5G Allicdata Electronics

TF414T5G Discrete Semiconductor Products

Allicdata Part #:

TF414T5GOSTR-ND

Manufacturer Part#:

TF414T5G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IC JFET N-CH 40V XDFN3
More Detail: JFET N-Channel 40V 1mA 100mW Surface Mount SOT-883...
DataSheet: TF414T5G datasheetTF414T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.07144
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 50µA @ 10V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 4V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 0.7pF @ 10V
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Description

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The TF414T5G is a field effect transistor from Toshiba. This device is specifically designed to operate in low-voltage, low-power applications and is often used in powering important components or processes in consumer or industrial electronics. As part of the JFET family of transistors, the TF414T5G is especially noted for its ability to effectively regulate current flow or act as a switch for controlling signal levels.

This JFET transistor typically runs on 5V, with a power voltage of +5V and a maximum collector current of 200mA. It features a low-power drain which makes it suitable for many applications that require a low current draw and reliability under normal operating conditions. Due to its low on-resistance, the TF414T5G is also able to support a high source-drain current when used in pulsed mode.

The primary purpose of a TF414T5G is to control voltages in the circuit and regulate current flow. As a JFET, the device draws on its intrinsic input characteristics to achieve this function. It can act like a variable resistor with two terminals connected to different voltages, so it regulates how much current passes through.

The working principle of the TF414T5G lies in its N-channel semiconductor field effect transistor structure. Its three terminals consist of the source, gate, and drain. The source and drain are separated by a thin, undoped layer of semiconductor material. When a voltage is applied to the gate, the semiconductor layer becomes charged and affected by the electric field around it. This creates a resistive flow of electrons through the source-drain junction which can then be used to regulate current.

In addition to its primary function of current regulation, the TF414T5G can also be used as a switch. When used as a switch, the device is able to control how much current is allowed to flow through the source-drain junction in either direction. This makes the device ideal for creating digital logic functions and signals.

The TF414T5G is a versatile and reliable transistor from Toshiba that is suited for many different low-voltage, low-power applications. Its ability to regulate current flow or act as a switch for controlling signals makes it a great choice for a wide variety of designs. The TF414T5G’s N-channel semiconductor field effect transistor design and its intrinsic input characteristics enable it to work effectively in the various tasks it is designed to accomplish.

The specific data is subject to PDF, and the above content is for reference

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