TH58BVG2S3HTA00 Allicdata Electronics
Allicdata Part #:

TH58BVG2S3HTA00-ND

Manufacturer Part#:

TH58BVG2S3HTA00

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Toshiba Memory America, Inc.
Short Description: IC FLASH 4G PARALLEL 48TSOP I
More Detail: FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parall...
DataSheet: TH58BVG2S3HTA00 datasheetTH58BVG2S3HTA00 Datasheet/PDF
Quantity: 138
Stock 138Can Ship Immediately
Specifications
Series: Benand™
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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TH58BVG2S3HTA00 Memory is a high-performance radix-two complementary metal-oxide-semiconductor (CMOS) memory device that is specifically designed for highly-scalable, multi-processor computing applications. It includes a large array of memory cells and can be used in a variety of different computing applications. The device provides high-density, high-performance access to data, which is essential in a number of large-scale computing tasks, such as databases, video compression, and network communication.

The TH58BVG2S3HTA00 Memory device utilizes a two-stage cache memory structure. The first stage is a high-speed first-level cache, or L1 cache. This is a small pool of data that is directly fetched from the main memory and stored in the device\'s internal cache before being used. The second stage is a high-speed second-level cache, or L2 cache. This is a larger pool of data that is stored within the device\'s external cache.

The TH58BVG2S3HTA00 Memory device is designed to provide direct access to main memory, allowing multiple processors to access the data stored in the device at the same time. This allows for more efficient access to data and results in an increase in overall system performance. It also offers a low-power option for applications that require reduced power consumption.

In terms of application fields, the TH58BVG2S3HTA00 Memory device is most commonly used in enterprise systems, which requires high data access speeds and low power consumption. It is ideal for applications that handle large amounts of data, such as databases and other enterprise applications. It can also be used in distributed computing applications, such as those used in cloud computing.

The primary working principle of this memory device is that it uses a two-stage cache memory structure, allowing for fast access to data stored in main memory. This allows for efficient data access and results in improved system performance. It also provides a low-power option, allowing for reduced power consumption.

In conclusion, the TH58BVG2S3HTA00 Memory device is a high-performance CMOS device, designed for highly-scalable, multi-processor computing, and is most commonly used in enterprise systems. It is capable of providing direct access to main memory and utilizes a two-stage cache memory structure, allowing for both fast access to data and reduced power consumption.

The specific data is subject to PDF, and the above content is for reference

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