TH58BYG2S3HBAI6

Series:	Benand™
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND (SLC)
Memory Size:	4Gb (512M x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	67-VFBGA
Supplier Device Package:	67-VFBGA (6.5x8)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Overview of Memory

Memory is a critical element in digital devices, especially in connecting highly abstracted software programs and hardware components in communication. Memory is divided into internal memories and external memories. Due to the invention of integrated circuits, internal memories are mostly integrated in the form of Array or Static RAM (SRAM), and external memories are commonly divided into memory cards and hard disks.

TH58BYG2S3HBAI6

TH58BYG2S3HBAI6 stands for Toshiba\'s number for a 64Mbit NAND flash memory. It is a type of flash memory, which is categorized as a non-volatile memory, i.e., it does not lose its stored data even when power is removed. NAND flash memory is one of the most cost-effective types of flash storage for consumer electronics and mobile devices. TH58BYG2S3HBAI6 is cheap, yet still quite reliable.

Application Field of TH58BYG2S3HBAI6

TH58BYG2S3HBAI6 is a good choice for consumer electronics such as digital cameras, navigation devices, gaming consoles, portable media players and digital music players. It can be used as an embedded memory and in Non-Volatile Memory (NVM) applications. It is also used in mobile devices such as smartphones, tablets and portable eBook readers. Moreover, it can be used in embedded system controllers, embedded image processing and signal processing. It is suitable for industrial control equipment such as ultrasonic machines, testing instrument and measuring equipment. In addition, it can also be used in aerospace and military applications. Furthermore, it can be used for storage in unmanned vehicle systems such as drones and autonomous vehicles, as well as in Internet of Things application.

Working Principle of TH58BYG2S3HBAI6

TH58BYG2S3HBAI6 operates using the common NAND flash memory technology. Like other NAND flash memories, it stores data in memory cells in a 2-dimensional array. The array is interconnected by a set of control circuits to access the data stored in the array. The layout of the memory cells and the circuitry of the control circuits make up the basis of the working principle of the TH58BYG2S3HBAI6. Each memory cell is composed of two equivalent parts called transistors. These two transistors are connected by two gates, labelled select gate and floating gate. Complicated processes such as the tunnel effect and Fowler-Nordheim tunnel effect are used to transfer electrons from the select gate to the floating gate. The presence or absence of electrons in the floating gate determines whether the memory cell is storing a 0 or a 1 bit. Data is written to the cells by channeling electrons to the floating gate of a cell. Reading the data is done by measuring the electric current in the channel. This current will vary by the presence or absence of the electrons in the floating gate. In conclusion, TH58BYG2S3HBAI6 is a type of NAND flash memory which is widely used in a variety of applications. Its working principle is based on the tunnel effect and Fowler-Nordheim tunnel effect, by which electrons are transferred from the select gate to the floating gate, and the presence or absence of electrons in the floating gate determines the stored bit.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description