TH58NVG2S3HTA00

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND (SLC)
Memory Size:	4Gb (512M x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I

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:< div >< p>The TH58NVG2S3HTA00 is a type of non-volatile memory, specifically a NAND Flash memory. In simple terms, it stores information long-term, even when the power is turned off. It is one of the most popular types of memory used in a wide variety of applications, ranging from digital cameras, portable media players and thumb drives to embedded systems in washing machines and car immobilizers.

The TH58NVG2S3HTA00 works by connecting to a host controller via a serial interface. The controller buffers the data and performs ECC (error correction codes) to ensure that data stays consistent during the write/read operations. The basic operation of the NAND Flash consists of two processes: the Programming Sequence and the Read Sequence.

The Programming Sequence consists of the following steps: 1. Erase block: the memory block is erased and reset; 2. Program page: the data is programmed into memory cells; 3. Verify page: the data is verified against the programmed data to ensure correct operation and correct data.

The Read Sequence is a simple process for retrieving data from the memory: 1. Read page: data is read from the memory cells; 2. Verify page: the data is compared to the expected data.

The TH58NVG2S3HTA00 can be used in many applications such as personal computers, digital cameras, PDAs, cellular phones, batteries, industrial systems, navigation systems, medical equipment, automated test systems, consumer electronics and automotive systems. It is also suitable for high-speed data transfers, and because of its low power consumption, it is particularly well-suited for portable and power-sensitive systems.

The TH58NVG2S3HTA00 is widely used due to its high reliability and excellent performance. The NAND Flash memory has a feature known as the “writing error tolerance”, which means that it can tolerate a certain number of errors during the writing process without creating any malfunctions. In addition, its excellent electrical/mechanical characteristics make it ideal for applications that require extremely small footprints.

In summary, the TH58NVG2S3HTA00 is a type of non-volatile memory that is suitable for a wide range of applications. It provides high reliability and excellent performance, as well as a low power consumption. The Programming Sequence and the Read Sequence is its working principle.