TH58NVG3S0HTAI0 Allicdata Electronics
Allicdata Part #:

TH58NVG3S0HTAI0-ND

Manufacturer Part#:

TH58NVG3S0HTAI0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Toshiba Memory America, Inc.
Short Description: IC FLASH 8G PARALLEL 48TSOP I
More Detail: FLASH - NAND (SLC) Memory IC 8Gb (1G x 8) Parallel...
DataSheet: TH58NVG3S0HTAI0 datasheetTH58NVG3S0HTAI0 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 8Gb (1G x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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Memory technology is one of the fundamental elements of modern computing, it supports the storage, retrieval and manipulation of data to enable complex tasks to be completed in a timely and accurate manner. TH58NVG3S0HTAI0 is a type of computer memory developed by Toshiba Corporation and it has become a standard in the industry, used on many devices worldwide. In this article, we will discuss the application field and working principle of TH58NVG3S0HTAI0 memory.

The main application field for TH58NVG3S0HTAI0 memory is embedded systems, such as those found in vehicles, home appliances and industrial automation. This type of memory is specifically designed for applications where stability and performance are key, owing to its low power consumption, fast memory read and write times, as well as its efficient error correction and redundancy. In addition, TH58NVG3S0HTAI0 memory has also been widely adopted in mobile devices, such as smartphones, and it is now being used in many computers and servers as well.

In terms of its working principle, TH58NVG3S0HTAI0 memory operates using a synchronous dynamic random access memory (SDRAM) architecture, which is a type of non-volatile memory designed for high-speed operation. SDRAM is a type of RAM that is synchronized with the system clock of the motherboard, allowing commands to be pipelined into memory and read or write at the same speed. This type of memory works in two steps, first it loads the data into memory and then reads it out, using a set of integrated circuit (IC) devices and connecting pins.

When data is stored in TH58NVG3S0HTAI0 memory, it is broken down into a number of separate memory elements which are stored in rows and columns. The rows and columns are accessed through the use of row and column address registers, which are used to control the addressing of the memory cells. When data is read from the memory, the register is updated with the row and column address and then the data is fetched from the memory cells. It is also possible to write data to the memory, in which case the same set of registers are used to set the row and column addresses and the data is stored in the memory cells.

In order to ensure the security and reliability of TH58NVG3S0HTAI0 memory, it utilizes an error-correction coding (ECC) system. This system uses parity bits to detect errors in the read or write data and can also correct minor errors with the use of a Hamming code algorithm. This system is an integral part of the memory, ensuring that data stored in the memory cells is correct and reliable.

In conclusion, TH58NVG3S0HTAI0 memory is a type of computer memory developed by Toshiba Corporation, which has become the industry standard for use in embedded systems and mobile devices. It utilizes a synchronous dynamic random access memory (SDRAM) architecture and it also includes an error-correction coding (ECC) system to ensure reliable operation. This type of memory is widely used for its stability and performance, as well as its low power consumption, fast memory read and write times and efficient error correction and redundancy.

The specific data is subject to PDF, and the above content is for reference

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