TH58NVG3S0HTA00

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND (SLC)
Memory Size:	8Gb (1G x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP I

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Introduction
TH58NVG3S0HTA00 is a high-performance, low-power non-volatile memory (NVM). It is high speed and lower power than conventional NVM but also can support secure storage of data. The High-performance architecture improves read performance and increases write speed. The power efficiency of the device allows lower power consumption while at the same time providing an extended temperature operating range. It is made up of 32KB of Flash memory, providing a wide range of applications.Application Field
TH58NVG3S0HTA00 is designed to provide protection for high-end embedded applications, such as microcontrollers, microprocessors, sensors, communications, automotive, and various other commercial and industrial applications. It can offer users with several advantages, such as providing secure data storage, low power consumption and high performance. In automotive applications, it can be used in engine management, powertrain management, audio, infotainment, and more. It is also useful in industrial applications, such as automation and control, as well as consumer electronics, including game consoles and digital cameras.Working Principle
TH58NVG3S0HTA00 is designed with a three-dimensional structure, consisting of a sub-micron, vertical arrangement of memory cells. This arrangement provides improved workload, performance and power consumption. Each memory cell contains a single transistor and a floating gate. The transistor is used to write data and the floating gate is used to store the data. Data is written to the floating gate by applying a high voltage to the transistor, which opens the transistor and allows current to travel through it and thus charging the floating gate. Once the gate is charged, the transistor is closed, so that no current can pass through it, and the data is stored in the floating gate. To read the data, a control voltage is applied to the transistor, which either opens or closes the transistor depending on the charge on the floating gate. The data is then read and can then be used.Conclusion
TH58NVG3S0HTA00 is a high performance, low power non-volatile memory that is ideal for embedded applications, automotive applications and industrial applications. It is made up of 32KB of flash memory, providing a wide range of applications. The three-dimensional cell architecture allows for improved workload, performance and power consumption. The memory cell contains a single transistor and a floating gate, which store the data when it is written and read by the user.

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