TJ20S04M3L(T6L1,NQ

Series:	U-MOSVI
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	22.2 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 10V
Vgs (Max):	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:	1850pF @ 10V
FET Feature:	--
Power Dissipation (Max):	41W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK+
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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The TJ20S04M3L (T6L1, NQ) is an enhancement-mode Single-P-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a high power FET device that can be used for various kinds of applications, including power switching and motor drive functions. It is manufactured by Taiwan Semiconductor Corporation, one of the world’s leading semiconductor manufacturers.The TJ20S04M3L is designed for medium and low resistance applications, with a total gate charge of 4.2A. It operates over a temperature range of -40°C to +150°C, with an on-resistance of 2.5mohms at 25°C and an RDS(ON) of 0.70A. It features a low gate-source capacitance of 15pF and a high slew rate of 50V/µs. The TJ20S04M3L is equipped with high-performance features such as a fast switching speed and a low output capacitance. It has an impressive breakdown voltage of 91V and drain-source breakdown voltage of 20V. Its power dissipation capability is 11W @ 25/+125°C, making it suitable for high-power applications. It also offers low gate leakage current and ESD protection of 8kV HBM. In terms of applications, the TJ20S04M3L is suitable for various kinds of power MOSFETs switch applications. It is a common choice for high-speed power computing and lighting applications, as well as for motor drive operations. This makes it suitable for applications in the industrial, automotive, and consumer electronics sectors. The TJ20S04M3L has a particularly low on-resistance and high switching speed, making it an ideal choice for applications where speed and efficiency are of the utmost importance, such as power converters or AC/DC switching regulators. Its high ESD protection levels make it suitable for use in environments where static electricity may be present. The working principle behind the TJ20S04M3L is fairly simple. When a voltage is applied to the gate of the MOSFET, electrons are drawn from the source to the drain. This creates a conduction channel between the source and the drain and allows current to flow through the MOSFET. The MOSFET can then be used as a switch, allowing current to flow when it is turned “on” and blocking it when it is turned “off.” Overall, the TJ20S04M3L is a versatile, low-voltage and high-current MOSFET that offers excellent performance and reliability. Its versatile capabilities make it suitable for a wide range of applications, from basic switching operations to more complex power operations, making it a sought-after component for many different electronics projects.

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