TLZ2V7A-GS08 Allicdata Electronics
Allicdata Part #:

TLZ2V7A-GS08-ND

Manufacturer Part#:

TLZ2V7A-GS08

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 2.7V 500MW SOD80
More Detail: Zener Diode 2.7V 500mW Surface Mount SOD-80 MiniM...
DataSheet: TLZ2V7A-GS08 datasheetTLZ2V7A-GS08 Datasheet/PDF
Quantity: 1000
12500 +: $ 0.02193
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 2.7V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Description

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Diodes are semiconductor devices that act as electricity valves, allowing a current to flow in one direction but not in the other. Zener diodes are one type of diode that helps regulate voltage, allowing a current to flow in the reverse-biased direction but with a specific specified level of voltage. The TLZ2V7A-GS08 is a single zener diode integrated into a package designed to save board space and simplify thermal management.

TLZ2V7A-GS08 is suitable for various applications, such as surge absorption, clamping, power supply regulation and general reflux protection. Its narrow package size also allows a greater level of miniaturization for applications requiring a high level of integration. With its low reverse leakage current and high impedance due to the AV protection diode, it is used in automotive electronics, such as boost and buck converters, voltage regulator modules, lighting control modules, automotive display systems, and telecommunication systems.

The working principle of the TLZ2V7A-GS08 is to provide reverse biasing for the current to be passed through, preventing excessive levels of current from harming the underlying components. This reverse bias is created by attaching a voltage source across the junction of the diode. When the voltage is above the Zener voltage, a breakdown or “zener” effect occurs, allowing a certain amount of current through the diode. The TLZ2V7A-GS08 is designed to maintain a pin-pointed zener voltage, allowing an exact amount of current flow. The voltage above the device’s Zener voltage is then absorbed or “clamped” by the zener diode.

The internal construction of the TLZ2V7A-GS08 is designed to take maximum advantage of its unusual breakdown properties, achieving the lowest possible power dissipation at any given voltage level. The TLZ2V7A-GS08 is manufactured using a custom process consisting of epitaxial growth and nanoscale high-impedance shunt layers. The combination of these layers results in a low on-state voltage and small component size, allowing the TLZ2V7A-GS08 to present the lowest possible power loss for any given voltage in the 0.7V to 23V range. The TLZ2V7A-GS08 also has a wide dynamic range, allowing it to support a wide range of applications with its robust protection features.

TheTLZ2V7A-GS08 is ideal for applications requiring high performance, minature size and low power loss in a wide range of voltages. Its small size and high-precision Zener voltage make it the perfect choice for applications such as surge absorption, clamping, power supply regulation, or general reflux protection. With its highly advanced internal construction and nanoscale features, the TLZ2V7A-GS08 is sure to provide the utmost in performance and reliability no matter the application.

The specific data is subject to PDF, and the above content is for reference

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