
Allicdata Part #: | 296-10867-5-ND |
Manufacturer Part#: |
TPIC44L01DB |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | IC DRIVER PRE FET 4 CHAN 24-SSOP |
More Detail: | Low-Side Gate Driver IC Non-Inverting 24-SSOP |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Logic Voltage - VIL, VIH: | -- |
Base Part Number: | TPIC44L01 |
Supplier Device Package: | 24-SSOP |
Package / Case: | 24-SSOP (0.209", 5.30mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 3.5µs, 3µs |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 1.2mA, 1.2mA |
Series: | -- |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Gate Type: | N-Channel, P-Channel MOSFET |
Number of Drivers: | 4 |
Channel Type: | Independent |
Driven Configuration: | Low-Side |
Part Status: | Obsolete |
Packaging: | Tube |
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The TPIC44L01DB is a high side, low-side, or dual gate driver integrated circuit (IC) designed for automotive demands. It is built with power management integrated circuit (PMIC) technologies and falls under the classification of gate drivers. This IC is designed to provide efficient power management solutions for applications such as motor controls, lighting, and automotive or consumer electronics. This article will discuss the application field and working principle of the TPIC44L01DB.
The TPIC44L01DB is designed to drive external N-channel MOSFETs, bipolar junction transistors (BJTs), and insulated gate bipolar transistors (IGBTs). It can be used in a wide range of applications, from high power consumer applications such as motors, heaters, air conditioners, lighting and consumer appliances, to automotive applications such as starter systems, charging systems, and body electronics. It also features an advanced fault-detection mechanism, which can detect and alert users of any possible overcurrent or overtemperature conditions.
The IC features a variety of advancements that make it an ideal choice for automotive applications. It has low quiescent current, fast switching speed, high temperature range, low temperature coefficient, and high resistance to noise, ESD, and surges. Additionally, it provides protection against over-voltage, over-current, and short circuit conditions.
The working principle of the TPIC44L01DB is based on the fact that when a low side gate driver drives the N-channel MOSFET, the high side gate driver is not required because the negative voltage from the power source is used to pull the N-channel MOSFET gate to its reverse bias. The negative voltage is called the body effect voltage, and it is created when the voltage of the power supply is higher than that of the N-channel MOSFET. The sole purpose of the high side gate driver is to provide the correct bias to the gate of the N-channel MOSFET. By applying a correct voltage to the gate of the N-channel MOSFET, the N-channel MOSFET can be driven to conduct or not conduct.
Furthermore, the TPIC44L01DB provides automatic shutdown with reset when an overvoltage, overcurrent, or short circuit occurs. When a fault is detected, the driver will shut down and latch in the high side and low side MOSFETs. This shutdown feature ensures that no damage is done to the power train, providing a safe and reliable power management solution for automotive applications.
In summary, the TPIC44L01DB is a high side, low side, or dual gate driver IC designed for automotive demands. It is built with power management IC technologies and falls under the classification of gate drivers. It is designed to drive external N-channel MOSFETs, BJTs, and IGBTs and provides protection against overvoltage, overcurrent, and short circuit conditions. The working principle of the TPIC44L01DB is based on the body effect voltage, which is created when the voltage of the power supply is higher than that of the N-channel MOSFET. Lastly, the TPIC44L01DB provides automatic shutdown with reset when certain faults occur. The TPIC44L01DB is an excellent choice for automotive applications due to its low quiescent current, low temperature coefficient, fast switching speed, and high resistance to noise, ESD, and surges.
The specific data is subject to PDF, and the above content is for reference
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