TZQ5263B-GS18

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	56V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	150 Ohms
Current - Reverse Leakage @ Vr:	100nA @ 43V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	SOD-80 Variant
Supplier Device Package:	SOD-80 QuadroMELF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TZQ5263B-GS18 is an ideal single Zener diode designed for a variety of applications. It has an extended temperature range of -65°C to 175°C, making it suitable for high temperature environments. This diode has a structure that provides several features including low leakage current, fast switching, and excellent noise immunity.Application fieldThe TZQ5263B-GS18 has a wide range of applications for various devices. It can be used in automotive, industrial, and consumer electronics. This diode can also be used in communications systems, such as LANs, WANs, and telephone systems. The device applies to diverse applications such as over-voltage protection and precision voltage regulation, thanks to its high breakdown voltage and low leakage current.Secondly, it can be used as a current limiter in high reliability systems, as it can limit current surges. For example, it can be used as a current limiting diode in SMPS systems. Additionally, the TZQ5263B-GS18 can also be used to provide over-current protection in LED driver applications, ensuring that LED\'s potential failures are avoided.Working PrincipleThe TZQ5263B-GS18 is a single Zener diode with a breakdown voltage of 18V. Its structure is based on a PN junction diode. A PN junction diode is composed of two pieces of semiconductor material, one piece being doped with an impurity and the other having no impurities. This diode works like a voltage-controlled switch, as it allows current to flow in one direction when the voltage across the PN junction reaches the breakdown voltage.When the anode is connected to a higher voltage than the cathode, a reverse-bias voltage is applied to the PN junction. When the reverse-bias voltage reaches the device\'s threshold breakdown voltage, the PN junction breaks down and becomes conductive, and current can flow in the opposite direction. This is the principle of Zener breakdown as applied to the TZQ5263B-GS18, which offers excellent noise immunity, fast switching speed, and low leakage current, making it ideal for a variety of applications.The TZQ5263B-GS18 is a single Zener diode with a breakdown voltage of 18V and an operating temperature range of -65°C to 175°C. This device offers several features such as low leakage current, fast switching, and excellent noise immunity, which make it suitable for a variety of applications, such as over-voltage protection and precision voltage regulation. Additionally, it can be used as a current limiter for high reliability systems, as it can limit current surges, and can provide over-current protection in LED driver applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description